VB20200G-E34W Vishay

V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.62 V at I = 5 A F F FEATURES TMBS TO-220AB ITO-220AB Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) 3 3 2 2 1 Solder bath temperature 275 C maximum, 10 s, per V20200G 1 VF20200G JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA PIN 1 PIN 1 PIN 2 PIN 2 package) CASE PIN 3 PIN 3 Material categorization: for definitions of compliance 2 please see www.vishay.com/doc 99912 D PAK (TO-263AB) TO-262AA K TYPICAL APPLICATIONS K For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC 2 converters and reverse battery protection. 3 1 2 MECHANICAL DATA 1 VB20200G VI20200G 2 PIN 1 K PIN 1 PIN 2 Case: TO-220AB, ITO-220AB, D PAK (TO-263AB), and TO-262AA PIN 2 PIN 3 K HEATSINK Molding compound meets UL 94 V-0 flammability rating click logo to get started DESIGN SUPPORT TOOLS Base P/N-E3 - RoHS compliant, commercial grade Terminals: matte tin plated leads, solderable per Models J-STD-002 and JESD 22-B102 Available E3 suffix meets JESD 201 class 1A whisker test Polarity: as marked PRIMARY CHARACTERISTICS Mounting Torque: 10 in-lbs max. I 2 x 10 A F(AV) V 200 V RRM I 110 A FSM V at I = 10 A 0.71 V F F T max. 150 C J TO-220AB, ITO-220AB, Package 2 D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Max. repetitive peak reverse voltage V 200 V RRM per device 20 Max. average forward rectified current (fig. 1) I A F(AV) per diode 10 Peak forward surge current 8.3 ms single half sine-wave superimposed I 110 A FSM on rated load per diode Non-repetitive avalanche energy at T = 25 C, L = 60 mH per diode E 60 mJ J AS Peak repetitive reverse current at t = 2 s, 1 kHz, T = 38 C 2 C p J I 0.5 A RRM per diode Voltage rate of change (rated V ) dV/dt 10 000 V/s R Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 18-Jun-2018 Document Number: 89117 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 V20200G-E3, VF20200G-E3, VB20200G-E3, VI20200G-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT Breakdown voltage I = 1.0 mA T = 25 C V 200 (min.) - V R J BR I = 5 A 0.86 - F T = 25 C J I = 10 A 1.23 1.70 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.62 - F T = 125 C J I = 10 A 0.71 0.80 F T = 25 C 1.9 - A J V = 180 V R T = 125 C 1.6 - mA J (2) Reverse current per diode I R T = 25 C - 150 A J V = 200 V R T = 125 C 2.5 15 mA J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL V20200G VF20200G VB20200G VI20200G UNIT Typical thermal resistance per diode R 3.2 5.5 3.2 3.2 C/W JC ORDERING INFORMATION (EXAMPLE) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB V20200G-E3/4W 1.88 4W 50/tube Tube ITO-220AB VF20200G-E3/4W 1.75 4W 50/tube Tube TO-263AB VB20200G-E3/4W 1.39 4W 50/tube Tube TO-263AB VB20200G-E3/8W 1.39 8W 800/reel Tape and reel TO-262AA VI20200G-E3/4W 1.45 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 25 9 D = 0.8 D = 0.5 Resistive or Inductive Load 8 D = 0.3 D = 0.2 V(B,I)20200G 20 7 D = 0.1 6 D = 1.0 15 5 VF20200G 4 10 T 3 2 5 1 D = t /T t p p 0 0 0725 505 100 125 150175 062841012 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 18-Jun-2018 Document Number: 89117 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)