VBT6045C-E3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.33 V at I = 10 A F F FEATURES TMBS Trench MOS Schottky technology TO-263AB Low forward voltage drop, low power losses High efficiency operation K Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Material categorization: For definitions of compliance 2 please see www.vishay.com/doc 99912 1 VBT6045C TYPICAL APPLICATIONS PIN 1 K For use in high frequency DC/DC converters, switching PIN 2 HEATSINK power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-263AB PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 30 A F(AV) Base P/N-E3 - RoHS-compliant, commercial grade V 45 V RRM Terminals: Matte tin plated leads, solderable per I 320 A FSM J-STD-002 and JESD 22-B102 V at I = 30 A 0.47 V F F E3 suffix meets JESD 201 class 1A whisker test T max. 150 C J Polarity: As marked Package TO-263AB Mounting Torque: 10 in-lbs maximum Diode variations Common cathode MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT6045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 60 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 30 Peak forward surge current 8.3 ms single half sine-wave I 320 A FSM superimposed on rated load Operating junction and storage temperature range T , T -40 to +150 C J STG Revision: 09-Sep-13 Document Number: 89362 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VBT6045C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 10 A 0.44 - F I = 15 A T = 25 C 0.47 - F A I = 30 A 0.54 0.64 F (1) Instantaneous forward voltage per diode V V F I = 10 A 0.33 - F I = 15 A T = 125 C 0.37 - F A I = 30 A 0.47 0.56 F T = 25 C -3000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 18 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VBT64045CUNIT per diode 1.5 Typical thermal resistance R C/W JC per device 0.8 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-263AB VBT6045C-E3/4W 1.38 4W 50/tube Tube TO-263AB VBT6045C-E3/8W 1.38 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 70 20 D = 0.5 D = 0.8 18 D = 0.3 60 16 50 14 D = 0.2 12 40 10 D = 1.0 D = 0.1 30 8 T 6 20 4 10 2 D = t /T t p p 0 0 100 110 120 130 140 150 0 5 10 15 20 25 30 35 Case Temperature (C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode Revision: 09-Sep-13 Document Number: 89362 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Forward Rectified Current (A) Average Power Loss (W)