Product Information

VESD05A1B-02V-G-08

VESD05A1B-02V-G-08 electronic component of Vishay

Datasheet
ESD Suppressors / TVS Diodes 5.0 Volt 3.0 Amp

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.0801
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.5209
10 : USD 0.3959
100 : USD 0.2463
500 : USD 0.1685
1000 : USD 0.1297
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 0.5209
10 : USD 0.3959
100 : USD 0.2463
500 : USD 0.1685
1000 : USD 0.1297
N/A

Obsolete
0 - WHS 4

MOQ : 3000
Multiples : 3000
3000 : USD 0.1167
6000 : USD 0.1102
N/A

Obsolete
0 - WHS 5

MOQ : 3000
Multiples : 3000
3000 : USD 0.0943
6000 : USD 0.0905
9000 : USD 0.0905
12000 : USD 0.0905
15000 : USD 0.0905
N/A

Obsolete
0 - WHS 6

MOQ : 3000
Multiples : 3000
3000 : USD 0.2174
N/A

Obsolete
0 - WHS 7

MOQ : 1
Multiples : 1
1 : USD 1.13
10 : USD 0.8521
100 : USD 0.2126
500 : USD 0.1453
1000 : USD 0.1165
2000 : USD 0.0994
10000 : USD 0.0919
24000 : USD 0.0866
50000 : USD 0.0855
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Current Rating
Operating Temperature Range
Power Dissipation Pd
Brand
Cnhts
Hts Code
Mxhts
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
LoadingGif

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VESD05A1B-02V www.vishay.com Vishay Semiconductors Single ESD Protection Diode in SOD-523 FEATURES Single-line ESD protection Capacitance typical C = 12 pF D (V = 2.5 V, f = 1 MHz) 1 2 R Leakage current I < 1 A (V = 5 V) R R 20278 ESD immunity acc. IEC 61000-4-2 19344 20 kV contact discharge 30 kV air discharge e3 - Sn MARKING (example only) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 XY 20279 Bar = cathode marking X = date code Y = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A1B-02V VESD05A1B-02V-G-08 3000 3000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A1B-02V SOD-523 . H 1.4 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A1B-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 s/single shot I 3A PPM Peak pulse power Acc. IEC 61000-4-5, 8/20 s/single shot P 33 W PP Contact discharge acc. IEC 61000-4-2 10 pulses 20 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C stg Rev. 1.4, 04-Jan-2019 Document Number: 83368 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A1B-02V www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20280 ELECTRICAL CHARACTERISTICS VESD05A1B-02V (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 0.1 A V 5- - V R R Reverse current at V = 5 V I - 0.01 0.1 A R R Reverse breakdown voltage at I = 1 mA V 66.8 7.5 V R BR at I = 1 A V -8 9.5 V PP C Reverse clamping voltage at I = I = 3 A V -8.9 11 V PP PPM C at I = 0.2 A V - 0.95 1.2 V PP F Forward clamping voltage at I = 1 A V -1.3 - V PP F at I = I = 3 A V -1.9 - V PP PPM F at V = 0 V f = 1 MHz C -19 23 pF R D Capacitance at V = 2.5 V f = 1 MHz C -12- pF R D Rev. 1.4, 04-Jan-2019 Document Number: 83368 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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