Product Information

VESD05A1B-02V-GS08

VESD05A1B-02V-GS08 electronic component of Vishay

Datasheet
ESD Suppressors 5.0 Volt 3.0 Amp

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1166 ea
Line Total: USD 349.8

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 1
3000 : USD 0.1166
3000 : USD 0.1119
6000 : USD 0.1069
12000 : USD 0.0972
30000 : USD 0.0972
60000 : USD 0.0972

     
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RoHS - XON
Icon ROHS
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Clamping Voltage
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VESD05A1B-02V www.vishay.com Vishay Semiconductors Single ESD Protection Diode in SOD-523 FEATURES Single-line ESD protection Capacitance typical C = 12 pF D (V = 2.5 V, f = 1 MHz) 1 2 R Leakage current I < 1 A (V = 5 V) R R 20278 ESD immunity acc. IEC 61000-4-2 19344 20 kV contact discharge 30 kV air discharge e3 - Sn MARKING (example only) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 XY 20279 Bar = cathode marking X = date code Y = type code (see table below) click logo to get started DESIGN SUPPORT TOOLS Models Available ORDERING INFORMATION TAPED UNITS PER REEL DEVICE NAME ORDERING CODE MINIMUM ORDER QUANTITY (8 mm TAPE ON 7 REEL) VESD05A1B-02V VESD05A1B-02V-G-08 3000 3000 PACKAGE DATA PACKAGE TYPE MOLDING COMPOUND MOISTURE DEVICE NAME WEIGHT SOLDERING CONDITIONS NAME CODE FLAMMABILITY RATING SENSITIVITY LEVEL MSL level 1 VESD05A1B-02V SOD-523 . H 1.4 mg UL 94 V-0 Peak temperature max. 260 C (according J-STD-020) ABSOLUTE MAXIMUM RATINGS VESD05A1B-02V PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Peak pulse current Acc. IEC 61000-4-5, 8/20 s/single shot I 3A PPM Peak pulse power Acc. IEC 61000-4-5, 8/20 s/single shot P 33 W PP Contact discharge acc. IEC 61000-4-2 10 pulses 20 kV ESD immunity V ESD Air discharge acc. IEC 61000-4-2 10 pulses 30 kV Operating temperature Junction temperature T -40 to +125 C J Storage temperature T -55 to +150 C stg Rev. 1.4, 04-Jan-2019 Document Number: 83368 1 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VESD05A1B-02V www.vishay.com Vishay Semiconductors BiAs-MODE (bidirectional asymmetrical protection mode) With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V ) the protection diode RWM between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch. As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The clamping voltage (V ) is defined by the breakthrough voltage (V ) level plus the voltage drop at the series impedance C BR (resistance and inductance) of the protection device. Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the protection diode. The low forward voltage (V ) clamps the negative transient close to the ground level. F Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour is bidirectional and asymmetrical (BiAs). L1 BiAs Ground 20280 ELECTRICAL CHARACTERISTICS VESD05A1B-02V (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected N - - 1 lines channel Reverse stand off voltage Max. reverse working voltage V -- 5 V RWM Reverse voltage at I = 0.1 A V 5- - V R R Reverse current at V = 5 V I - 0.01 0.1 A R R Reverse breakdown voltage at I = 1 mA V 66.8 7.5 V R BR at I = 1 A V -8 9.5 V PP C Reverse clamping voltage at I = I = 3 A V -8.9 11 V PP PPM C at I = 0.2 A V - 0.95 1.2 V PP F Forward clamping voltage at I = 1 A V -1.3 - V PP F at I = I = 3 A V -1.9 - V PP PPM F at V = 0 V f = 1 MHz C -19 23 pF R D Capacitance at V = 2.5 V f = 1 MHz C -12- pF R D Rev. 1.4, 04-Jan-2019 Document Number: 83368 2 For technical questions, contact: ESDprotection vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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