VFT4045C-M3 www.vishay.com Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low V = 0.28 V at I = 5.0 A F F FEATURES TMBS Trench MOS Schottky technology ITO-220AB Low forward voltage drop, low power losses High efficiency operation Solder bath temperature 275 C max. 10 s, per JESD 22-B106 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 3 2 1 TYPICAL APPLICATIONS VFT4045C For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and PIN 1 PIN 2 reverse battery protection. PIN 3 MECHANICAL DATA Case: ITO-220AB PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 2 x 20 A F(AV) Base P/N-M3 - halogen-free, RoHS-compliant, and V 45 V RRM commercial grade I 240 A FSM Terminals: matte tin plated leads, solderable per V at I = 20 A 0.41 V F F J-STD-002 and JESD 22-B102 T max. 150 C J M3 suffix meets JESD 201 class 1A whisker test Package ITO-220AB Polarity: as marked Circuit configuration Common cathode Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT4045C UNIT Maximum repetitive peak reverse voltage V 45 V RRM per device 40 Maximum average forward rectified current I A F(AV) (fig. 1) per diode 20 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load I 240 A FSM Isolation voltage from terminal to heatsink t = 1 min V 1500 V AC Operating junction and storage temperature range T , T -40 to +150 C J STG ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 5 A 0.41 - F I = 10 A T = 25 C 0.44 - F A I = 20 A 0.50 0.58 F (1) Instantaneous forward voltage per diode V V F I = 5 A 0.28 - F I = 10 A T = 125 C 0.33 - F A I = 20 A 0.41 0.50 F T = 25 C -3000 A A (2) Reverse current per diode V = 45 V I R R T = 125 C 18 50 mA A Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Revision: 19-Mar-18 Document Number: 89356 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VFT4045C-M3 www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VFT4045C UNIT per diode 5.0 Typical thermal resistance R C/W JC per device 3.5 ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE ITO-220AB VFT4045C-M3/4W 1.76 4W 50/tube Tube RATINGS AND CHARACTERISTICS CURVES (T = 25 C unless otherwise noted) A 45 100 40 T = 150 C A 35 30 10 25 T = 100 C A T = 125 C A 20 15 1 10 T = 25 C A 5 0 0.1 0 25 50 75 100 125 150 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Case Temperature (C) Instantaneous Forward Voltage (V) Fig. 1 - Maximum Forward Current Derating Curve Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode 12 100 T = 150 C A D = 0.8 D = 0.5 T = 125 C 10 A 10 D = 0.3 T = 100 C A 8 1 D = 0.2 6 D = 1.0 D = 0.1 0.1 T 4 T = 25 C A 0.01 2 D = t /T t p p 0 0.001 0 4 8 12 16 20 24 20 40 60 80 100 Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode Revision: 19-Mar-18 Document Number: 89356 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Average Power Loss (W) Average Forward Rectified Current (A) Instantaneous Reverse Current (mA) Instantaneous Forward Current (A)