VS-10CVH01-M3 www.vishay.com Vishay Semiconductors Hyper Fast Rectifier, 2 x 5 A FRED Pt FEATURES Base common Hyper fast recovery time cathode 4 175 C max. operating junction temperature 4 Low forward voltage drop reduced Q and soft rr recovery Low leakage current 1 2 2 Common Very low profile - typical height of 1.3 mm cathode 3 Ideal for automated placement 1 3 Anode Anode SlimDPAK (TO-252AE) Polyimide passivation for high reliability standard Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Meets JESD 201 class 2 whisker test PRODUCT SUMMARY Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Package SlimDPAK (TO-252AE) I 2 x 5 A F(AV) DESCRIPTION / APPLICATIONS V 100 V R State of the art hyper fast recovery rectifiers designed with V at I 0.74 V F F optimized performance of forward voltage drop, hyper fast t (typ.) 16 ns recovery time, and soft recovery. rr The planar structure and the platinum doped life time T max. 175 C J control guarantee the best overall performance, ruggedness Diode variation Common cathode and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 100 V RRM per leg 5 Average rectified forward current I T = 165 C F(AV) C per device 10 A Non-repetitive peak surge current per leg I T = 25 C 100 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 100 - - R blocking voltage V R I = 5 A - 0.90 1.04 F V I = 10 A - 1.0 1.17 F Forward voltage V F I = 5 A, T = 150 C - 0.74 0.84 F J I = 10 A, T = 150 C - 0.85 1.05 F J V = V rated - - 4 R R Reverse leakage current per leg I A R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 100 V - 17 - pF T R Revision: 04-May-17 Document Number: 96098 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10CVH01-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R RR Reverse recovery time t ns rr T = 25 C -21 - J T = 125 C - 30 - J I = 5 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 25 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient R -7390 thJA C/W (3) Thermal resistance, junction to case, per diode R -2.12.5 thJC Marking device Case style SlimDPAK (TO-252AE) 10CVH01 Notes (1) The heat generated must be less than thermal conductivity from junction to ambient dP /dT < 1R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink 100 100 175 C 10 150 C 125 C 10 1 T = 175 C J T = -40 C J 100 C 0.1 75 C 1 0.01 50 C T = 150 C J 0.001 T = 125 C J 25 C T = 25 C J 0.1 0.0001 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 50 100 150 200 V - Forward Voltage Drop (V) F V - Reverse Voltage (V) R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 04-May-17 Document Number: 96098 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R