Product Information

VS-10CWH02FN-M3

VS-10CWH02FN-M3 electronic component of Vishay

Datasheet
Vishay Rectifiers Freds - D-PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.058 ea
Line Total: USD 1.06

1575 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.9204
10 : USD 0.7714
30 : USD 0.6968
100 : USD 0.5841
500 : USD 0.5397
1000 : USD 0.5176

1575 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.058
10 : USD 0.8545
100 : USD 0.6762
500 : USD 0.5739
1000 : USD 0.4404
3000 : USD 0.4186
9000 : USD 0.399
24000 : USD 0.3887

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Tradename
LoadingGif

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VS-10CWH02FN-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 5 A FRED Pt FEATURES Base Hyperfast recovery time common 175 C max. operating junction temperature cathode 2 Output rectification freewheeling Low forward voltage drop reduced Q and soft rr 2 recovery 2 3 1 3 Low leakage current Common 1 Anode Anode Meets MSL level 1, per J-STD-020, LF maximum cathode DPAK (TO-252AA) peak of 260 C Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRIMARY CHARACTERISTICS State of the art hyperfast recovery rectifiers designed with I 2 x 5 A F(AV) optimized performance of forward voltage drop, hyperfast V 200 V R recovery time, and soft recovery. V at I 0.74 V F F The planar structure and the platinum doped life tim e t (typ.) 23 ns rr control guarantee the best overall performance, ruggedness T max. 175 C J and reliability characteristics. Package DPAK (TO-252AA) These devices are intended for use in PFC boost stage in th e Circuit configuration Common cathode AC/DC section of SMPS inverters or as freewheeling diodes . Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 200 V RRM Average rectified forward current I T = 160 C 10 F(AV) C A Non-repetitive peak surge current I T = 25 C 80 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R I = 5 A - 0.90 0.98 F V I = 10 A - 0.98 1.15 F Forward voltage V F I = 5 A, T = 150 C - 0.74 0.84 F J I = 10 A, T = 150 C - 0.84 1.05 F J V = V rated - - 4 R R Reverse leakage current per leg I T = 125 C, V = V rated - - 40 A R J R R T = 150 C, V = V rated - - 80 J R R Junction capacitance per leg C V = 600 V - 17 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 11-Apr-18 Document Number: 93263 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-10CWH02FN-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 23 27 F F R Reverse recovery time t T = 25 C -21 - ns rr J T = 125 C - 26 - J I = 5 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3.1 - J V = 160 V R T = 25 C - 20 - J Reverse recovery charge Q nC rr T = 125 C - 41 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg per leg -2.7 3.2 Thermal resistance, junction to case R C/W thJC per device - 1.35 1.6 0.3 g Approximate weight 0.01 oz. Marking device Case style DPAK (TO-252AA) 10CWH02FN 100 100 T = 175 C J 10 T = 150 C J T = 175 C J 10 1 T = 125 C J T = 100 C J 0.1 T = 75 C J 1 T = 125 C 0.01 J T = 50 C J T = 25 C 0.001 J T = 25 C J 0.1 0.0001 50 100 150 200 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 10 0 50 100 150 200 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 11-Apr-18 Document Number: 93263 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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