Product Information

VS-10TQ035STRL-M3

VS-10TQ035STRL-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0295 ea
Line Total: USD 2.03

7 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 1.3455
10 : USD 1.1212
100 : USD 0.8901
500 : USD 0.7751
800 : USD 0.6486
2400 : USD 0.6198
5600 : USD 0.6198
25600 : USD 0.6198

     
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VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES Base 175 C T operation J cathode 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical strength and 1 moisture resistance 1 3 3 Guard ring for enhanced ruggedness and long term N/C Anode 2 reliability D PAK (TO-263AB) Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 10 A F(AV) Material categorization: for definitions of compliance V 35 V, 45 V please see www.vishay.com/doc 99912 R V at I 0.49 V F F DESCRIPTION I max. 15 mA at 125 C RM The VS-10TQ...S-M3 Schottky rectifier series has been T max. 175 C J optimized for low reverse leakage at high temperature. The E 13 mJ AS proprietary barrier technology allows for reliable operation 2 Package D PAK (TO-263AB) up to 175 C junction temperature. Typical applications are Circuit configuration Single in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 10 A F(AV) V 35/45 V RRM I t = 5 s sine 1050 A FSM p V 10 A , T = 125 C 0.49 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-10TQ035S-M3 VS-10TQ045S-M3 UNITS Maximum DC reverse voltage V R 35 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 151 C, rectangular waveform 10 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 1050 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 280 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6.5 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 27-Oct-17 Document Number: 94923 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-10TQ035S-M3, VS-10TQ045S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 10 A 0.57 T = 25 C J 20 A 0.67 Maximum forward voltage drop (1) V V FM See fig. 1 10 A 0.49 T = 125 C J 20 A 0.61 T = 25 C 2 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 15 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 900 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation R 2.0 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 10TQ035S 2 Marking device Case style D PAK (TO-263AB) 10TQ045S 1000 1000 T = 175 C 100 J T = 150 C 100 J 10 T = 125 C J 1 T = 175 C J T = 100 C J 10 T = 125 C J T = 25 C 0.1 J T = 75 C J 0.01 T = 50 C 1 J 0.001 T = 25 C J 0.1 0.0001 05 10 15 20 25 30 35 40 45 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 94923 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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