Product Information

VS-125NQ015PBF

VS-125NQ015PBF electronic component of Vishay

Datasheet
Vishay Semiconductors Schottky Diodes & Rectifiers 120 Amp 15 Volt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 45.266 ea
Line Total: USD 45.27

28 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
26 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 32.292
10 : USD 31.05
60 : USD 29.808

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Height
Length
Operating Temperature Range
Width
Cnhts
Hts Code
Mxhts
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VS-125NQ015PbF www.vishay.com Vishay Semiconductors High Performance Schottky Rectifiers, 120 A FEATURES 125 C T operation (V < 5 V) J R Lug terminal anode Low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability Designed and qualified for industrial level Base cathode UL approved file E222165 HALF-PAK (D-67) Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 120 A F(AV) The VS-125NQ.. high current Schottky rectifier module V 15 V series has been optimized for low reverse leakage at high R temperature. The proprietary barrier technology allows for Package HALF-PAK (D-67) reliable operation up to 125 C junction temperature. Typical Circuit configuration Single diode applications are in high current switching power supplies, plating power supplies, UPS systems, converters, freewheeling diodes, welding, and reverse batter y protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 120 A F(AV) V 15 V RRM I t = 5 s sine 10 800 A FSM p V 120 A , T = 125 C 0.37 V F pk J T Range -55 to +125 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-125NQ015PbFUNITS Maximum DC reverse voltage V 15 R V Maximum working peak reverse voltage V 25 RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current I 50 % duty cycle at T = 74 C, rectangular waveform 120 F(AV) C See fig. 5 A 5 s sine or 3 s rect. pulse 10 800 Maximum peak one cycle Following any rated load non-repetitive surge current I condition and with rated FSM See fig. 7 10 ms sine or 6 ms rect. pulse V applied 1700 RRM Non-repetitive avalanche energy E T = 25 C, I = 5 A, L = 1 mH 12 mJ AS J AS Current decaying linearly to zero in 1 sr Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 01-Feb-2019 Document Number: 94459 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-125NQ015PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 120 A 0.43 T = 25 C J 240 A 0.58 Maximum forward voltage drop per leg (1) V V FM See fig. 1 120 A 0.37 T = 75 C J 240 A 0.52 T = 25 C 40 J Maximum reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 100 C 2000 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 7700 pF T R DC Typical series inductance L From top of terminal hole to mounting plane 7.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -55 to 125 J C Maximum storage temperature range T -55 to 150 Stg DC operation Maximum thermal resistance, junction to case R 0.38 thJC See fig. 4 C/W Typical thermal resistance, case to heatsink R Mounting surface, smooth and greased 0.05 thCS 30 g Approximate weight 1.06 oz. minimum 3 (26.5) Mounting torque maximum 4 (35.4) N m Non-lubricated threads (lbf in) minimum 3.4 (30) Terminal torque maximum 5 (44.2) Case style HALF-PAK module 1000 10 000 T = 100 C T = 100 C J 1000 J 100 T = 75 C 100 J T = 75 C J 10 10 T = 25 C T = 25 C J J 1 1 0 0.3 0.6 0.9 0369 12 15 V - Forward Voltage Drop (V) 94459 01 94459 02 V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 01-Feb-2019 Document Number: 94459 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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