Product Information

VS-12CTQ045STRL-M3

VS-12CTQ045STRL-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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1: USD 2.6243 ea
Line Total: USD 2.62

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 8000
Multiples : 8000
8000 : USD 0.6992

     
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VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 6 A FEATURES 175 C T operation J Center tap configuration Low forward voltage drop 2 High purity, high temperature epoxy 1 encapsulation for enhanced mechanical strength and 1 3 2 moisture resistance 2 D PAK (TO-263AB) 3 TO-262AA High frequency operation Base Base Guard ring for enhanced ruggedness and long term common common cathode cathode reliability 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 1 3 1 3 Common Common please see www.vishay.com/doc?99912 cathode Anode Anode Anode cathode Anode VS-12CTQ...S-M3 VS-12CTQ...-1-M3 DESCRIPTION The VS-12CTQ... center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. PRIMARY CHARACTERISTICS The proprietary barrier technology allows for reliable I 2 x 6 A F(AV) operation up to 175 C junction temperature. Typical V 35 V, 40 V, 45 V R applications are in switching power supplies, converters, V at I 0.53 V freewheeling diodes, and reverse battery protection. F F I max. 7.0 mA at 125 C RM T max. 175 C J E 8 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 12 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 690 A FSM p V 6 A , T = 125 C (per leg) 0.53 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-12CTQ035S-M3 VS-12CTQ040S-M3 VS-12CTQ045S-M3 PARAMETER SYMBOL UNITS VS-12CTQ035-1-M3 VS-12CTQ040-1-M3 VS-12CTQ045-1-M3 Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 94924 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-12CTQ...S-M3, VS-12CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS per leg 6 Maximum average forward I 50 % duty cycle at T = 160 C, rectangular waveform A F(AV) C current, see fig. 5 per device 12 5 s sine or 3 s rect. pulse Following any rated 690 Maximum peak one cycle non-repetitive I load condition and with A FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 140 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.20 A, L = 11.10 mH 8 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.20 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 6 A 0.60 T = 25 C J Maximum forward voltage drop per leg 12 A 0.73 (1) V V FM See fig. 1 6 A 0.53 T = 125 C J 12 A 0.64 T = 25 C 0.8 Maximum reverse leakage current per leg J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7.0 J Threshold voltage V 0.35 V F(TO) T = T maximum J J Forward slope resistance r 18.23 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 400 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 3.50 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 1.75 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque maximum 12 (10) (lbf in) 12CTQ035S 2 Case style D PAK (TO-263AB) 12CTQ040S 12CTQ045S Marking device 12CTQ035-1 Case style TO-262AA 12CTQ040-1 12CTQ045-1 Revision: 27-Oct-17 Document Number: 94924 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
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DLE
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General Semi
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Vishay Sprague
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Vishay Techno
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Vishay / MCB Industrie
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VISHAY TANSITOR
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Vishay Vitramon
VISHAY/BC COMPONENTS
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