VS-12CWQ10FNPbF Vishay Semiconductors Schottky Rectifier, 2 x 6 A Base FEATURES common cathode Popular D-PAK outline 4 Center tap configuration Small foot print, surface mountable Low forward voltage drop 2 High frequency operation Common cathode D-PAK (TO-252AA) Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Meets MSL level 1, per J-STD-020, LF maximum peak of Package D-PAK (TO-252AA) 260 C I 2 x 6 A F(AV) DESCRIPTION V 100 V R The VS-12CWQ10FNPbF surface mount, center tap, V at I 0.65 V F F Schottky rectifier series has been designed for applications I 4 mA at 125 C RM requiring low forward drop and small foot prints on PC T max. 150 C J board. Typical applications are in disk drives, switching Diode variation Common cathode power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. E 6 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 12 A F(AV) V 100 V RRM I t = 5 s sine 330 A FSM p V 6 Apk, T = 125 C (per leg) 0.65 V F J T Range - 55 to 150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-12CWQ10FNPbF UNITS Maximum DC reverse voltage V R 100 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 6 forward current I 50 % duty cycle at T = 135 C, rectangular waveform A F(AV) C per device 12 See fig. 5 Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 330 non-repetitive surge current per leg I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 110 See fig. 7 rated V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1 A, L = 12 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1A AR Frequency limited by T maximum V = 1.5 x V typical J A R Document Number: 94135 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 14-Jan-11 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com 1 VS-12CWQ10FNPbF Schottky Rectifier, 2 x 6 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 6 A 0.80 T = 25 C J Maximum forward 12 A 0.95 (1) voltage drop per leg V V FM 6 A 0.65 See fig. 1 T = 125 C J 12 A 0.78 Maximum reverse T = 25 C 1 J (1) leakage current per leg I V = Rated V mA RM R R T = 125 C 4 See fig. 2 J Threshold voltage V 0.47 V F(TO) T = T maximum J J Forward slope resistance r 20.68 m t Typical junction capacitance per leg C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 183 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 5.0 nH S Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage (1) T , T - 55 to 150 C J Stg temperature range per leg 3.0 Maximum thermal resistance, DC operation R C/W thJC junction to case See fig. 4 per device 1.5 0.3 g Approximate weight 0.01 oz. Marking device Case style D-PAK (similar to TO-252AA) 12CWQ10FN Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94135 2 DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com Revision: 14-Jan-11