Product Information

VS-130MT160KPBF

VS-130MT160KPBF electronic component of Vishay

Datasheet
Vishay Semiconductors Bridge Rectifiers 1600 Volt 130 Amp

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 95.7052 ea
Line Total: USD 95.71

11 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 83.0415
10 : USD 78.3265
30 : USD 78.154
60 : USD 77.717

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Type
Mounting Style
Package / Case
Peak Reverse Voltage
Vf - Forward Voltage
Max Surge Current
Minimum Operating Temperature
Maximum Operating Temperature
Length
Width
Height
Packaging
Ir - Reverse Current
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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VS-130-160MT..KPbF Series www.vishay.com Vishay Semiconductors Three Phase Bridge, 130 A to 160 A (Power Modules) FEATURES Package fully compatible with the industry standard INT-A-PAK power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio 4000 V isolating voltage RMS UL E78996 approved Designed and qualified for industrial level MTK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 130 A to 160 A O A range of extremely compact, encapsulated three phase V 800 V to 1600 V RRM bridge rectifiers offering efficient and reliable operation. Package MTK They are intended for use in general purpose and heavy duty Circuit configuration Three phase bridge applications. MAJOR RATINGS AND CHARACTERISTICS VALUES VALUES SYMBOL CHARACTERISTICS UNITS 130MT.K 160MT.K 130 (160) 160 (200) A I O T 85 (62) 85 (60) C C 50 Hz 1130 1430 I A FSM 60 Hz 1180 1500 50 Hz 6400 10 200 2 2 I t A s 60 Hz 5800 9300 2 2 I t 64 000 102 000 A s V Range 800 to 1600 V RRM T -40 to 150 Stg Range C T -40 to 150 J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM REPETITIVE V , MAXIMUM NON-REPETITIVE I MAXIMUM RRM RSM RRM VOLTAGE TYPE NUMBER PEAK REVERSE VOLTAGE PEAK REVERSE VOLTAGE AT T = MAXIMUM J CODE V V mA 80 800 900 100 1000 1100 VS-130MT.K 120 1200 1300 10 VS-160MT.K 140 1400 1500 160 1600 1700 Revision: 17-Aug-17 Document Number: 94354 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-130-160MT..KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 130MT.K 160MT.K 130 (160) 160 (200) A Maximum DC output current I 120 rect. conduction angle O at case temperature 85 (62) 85 (60) C t = 10 ms 1130 1430 No voltage reapplied Maximum peak, one-cycle t = 8.3 ms 1180 1500 forward, non-repetitive surge I A FSM t = 10 ms 950 1200 current 100 % V RRM reapplied t = 8.3 ms 1000 1260 Initial T = T maximum J J t = 10 ms 6400 10 200 No voltage reapplied t = 8.3 ms 5800 9300 2 2 2 Maximum I t for fusing I t A s t = 10 ms 4500 7200 100 % V RRM reapplied t = 8.3 ms 4100 6600 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 64 000 102 000 A s Low level value of (16.7 % x x I < I < x I ), T(AV) T(AV) V 0.78 0.81 T(TO)1 threshold voltage T maximum J V High level value of V (I > x I ), T maximum 0.99 1.04 T(TO)2 T(AV) J threshold voltage Low level value of forward slope 16.7 % x x I < I < x I ), T(AV) T(AV) r 4.59 3.52 f1 resistance T maximum J m High level of forward slope r (I > x I ), T maximum 4.17 3.13 f2 T(AV) J resistance Maximum forward I = 200 A, T = 25 C, t = 400 s single pk J p V 1.63 1.49 FM voltage drop junction V T = 25 C, all terminal shorted J RMS isolation voltage V 4000 ISOL f = 50 Hz, t = 1 s THERMAL AND MECHANICAL SPECIFICATIONS VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 130MT.K 160MT.K Maximum junction operating T , T -40 to 150 C J Stg and storage temperature range DC operation per module 0.16 0.12 DC operation per junction 0.93 0.73 Maximum thermal resistance, R thJC junction to case 120 rect. conduction angle per module 0.18 0.15 K/W 120 rect. conduction angle per junction 1.08 0.88 Maximum thermal resistance, Per module R 0.03 thCS case to heatsink Mounting surface smooth, flat and greased to heatsink 4 to 6 A mounting compound is recommended and Mounting Nm the torque should be rechecked after a period torque 10 % to terminal 3 to 4 of 3 hours to allow for the spread of the Approximate weight compound. Lubricated threads. 176 g Revision: 17-Aug-17 Document Number: 94354 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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DALE
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