VS-150EBU02 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 150 A FRED Pt FEATURES Ultrafast recovery time 1 175 C max. operating junction temperature Screw mounting only Cathode Anode Designed and qualified according to 2 JEDEC -JESD 47 PowerTab package Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PowerTab BENEFITS Reduced RFI and EMI Higher frequency operation PRIMARY CHARACTERISTICS I 150 A Reduced snubbing F(AV) V 200 V R Reduced parts count V at I 0.79 V F F DESCRIPTION / APPLICATIONS t (typ.) See recovery table rr T max. 175 C These diodes are optimized to reduce losses and EMI/RFI in J high frequency power conditioning systems. Package PowerTab The softness of the recovery eliminates the need for a Circuit configuration Single snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX.UNITS Cathode to anode voltage V 200 V R Continuous forward current I T = 116 C 150 F(AV) C Single pulse forward current I T = 25 C 1600 A FSM C Maximum repetitive forward current I Square wave, 20 kHz 380 FRM Operating junction and storage temperatures T , T -55 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS V , BR Breakdown voltage, blocking voltage I = 100 A 200 - - R V R V I = 150 A - 0.99 1.13 F Forward voltage V F I = 150 A, T = 175 C - 0.79 0.90 F J V = V rated - - 50 A R R Reverse leakage current I R T = 150 C, V = V rated - - 2 mA J R R Junction capacitance C V = 200 V - 180 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 3.5 - nH S Revision: 30-Jan-18 Document Number: 93002 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-150EBU02 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - - 45 F F R Reverse recovery time t T = 25 C -34- ns rr J T = 125 C - 58 - J I = 150 A F T = 25 C - 4.5 - J Peak recovery current I V = 160 V A RRM R T = 125 C - 9.0 - J dI /dt = 200 A/s F T = 25 C - 87 - J Reverse recovery charge Q nC rr T = 125 C - 300 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Thermal resistance, junction to case R --0.35 thJC K/W Thermal resistance, case to heatsink R Mounting surface, flat, smooth, and greased - 0.2 - thCS -- 5.02 g Weight -0.18- oz. 1.2 2.4 N m Mounting torque - (10) (20) (lbf in) Marking device Case style PowerTab 150EBU02 1000 1000 T = 175 C J 100 125 C 100 10 T = 175 C J T = 125 C J 1 T = 25 C J 25 C 10 0.1 0.01 0.001 1 0 50 100 150 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10 000 T = 25 C J 1000 100 1 10 100 1000 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 30-Jan-18 Document Number: 93002 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F C - Junction Capacitance (pF) T I - Reverse Current (A) R