Product Information

VS-15ETH06HN3

VS-15ETH06HN3 electronic component of Vishay

Datasheet
Rectifiers Freds - TO-220-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.003 ea
Line Total: USD 3

427 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
226 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 1.978
10 : USD 1.6445
100 : USD 1.2995
500 : USD 1.1051
1000 : USD 0.9372

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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VS-15ETH06-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES 2 Hyperfast recovery time Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Designed and qualified according to JEDEC -JESD 47 3 Material categorization: for definitions of compliance 2L TO-220AC please see www.vishay.com/doc?99912 Base cathode DESCRIPTION / APPLICATIONS 2 State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. 1 3 The planar structure and the platinum doped life time control Cathode Anode guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling PRIMARY CHARACTERISTICS diodes. I 15 A F(AV) Their extremely optimized stored charge and low recovery V 600 V R current minimize the switching losses and reduce over V at I 1.3 V F F dissipation in the switching element and snubbers. t typ. 22 ns rr T max. 175 C J Package 2L TO-220AC Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current I T = 140 C 15 F(AV) C Non-repetitive peak surge current I T = 25 C 120 A FSM J Peak repetitive forward current I 30 FM Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 600 - - BR R R I = 15 A - 1.8 2.2 V F Forward voltage V F I = 15 A, T = 150 C - 1.3 1.6 F J V = V rated - 0.2 50 R R Reverse leakage current I A R T = 150 C, V = V rated - 30 500 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 23-Nov-17 Document Number: 96174 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-15ETH06-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 22 30 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 28 35 F F R Reverse recovery time t ns rr T = 25 C -29 - J T = 125 C - 75 - J I = 15 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7 - J V = 390 V R T = 25 C - 57 - J Reverse recovery charge Q nC rr T = 125 C - 300 - J Reverse recovery time t -51 - ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -20 - A RRM J F V = 390 V Reverse recovery charge Q R - 580 - nC rr THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Maximum junction and storage temperature T , T -65 - 175 C J Stg range Thermal resistance, junction-to-case R -1.01.3 thJC Thermal resistance, junction-to-ambient per R Typical socket mount - - 70 thJA leg C/W Mounting surface, flat, smooth, Thermal resistance, case-to-heatsink R -0.5 - thCS and greased -2.0 - g Weight -0.07- oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC 15ETH06 100 1000 T = 175 C J 100 T = 150 C J 10 T = 125 C J T = 175 C J 1 T = 150 C T = 100 C J J 10 T = 25 C J 0.1 T = 25 C 0.01 J 0.001 1 0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) F R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 23-Nov-17 Document Number: 96174 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 I - Instantaneous Forward F Current (A) I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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