Product Information

VS-15TQ060STRL-M3

VS-15TQ060STRL-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.6136 ea
Line Total: USD 1.61

5788 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6208 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 800
Multiples : 800
800 : USD 0.728
1600 : USD 0.7207
2400 : USD 0.7078
5600 : USD 0.6737
10400 : USD 0.6579

5788 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.6136
10 : USD 1.3289
100 : USD 1.0263
500 : USD 0.7974
800 : USD 0.6668
2400 : USD 0.6585
5600 : USD 0.6276
10400 : USD 0.6051
25600 : USD 0.5897

     
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VS-15TQ060S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 15 A FEATURES Base 150 C T operation J cathode 2 Very low forward voltage drop High frequency operation High purity, high temperature epoxy 2 1 encapsulation for enhanced mechanical strength and moisture resistance 3 1 3 N/C Anode Guard ring for enhanced ruggedness and long term 2 D PAK (TO-263AB) reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 15 A F(AV) V 60 V Material categorization: for definitions of compliance R please see www.vishay.com/doc 99912 V at I 0.56 V F F I max. 45 mA at 125 C RM DESCRIPTION T max. 150 C J The VS-15TQ060S-M3 Schottky rectifier has been E 6 mJ AS optimized for very low forward voltage drop, with moderate 2 Package D PAK (TO-263AB) leakage. The proprietary barrier technology allows for Circuit configuration Single reliable operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 15 A F(AV) V 60 V RRM I t = 5 s sine 1000 A FSM p V 15 A , T = 125 C 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-15TQ060S-M3 UNITS Maximum DC reverse voltage V R 60 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 104 C, rectangular waveform 15 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated 1000 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 260 See fig. 7 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1.5 A, L = 11.5 mH 6 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 27-Oct-17 Document Number: 94927 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-15TQ060S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.62 T = 25 C J 30 A 0.82 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.56 T = 125 C J 30 A 0.71 T = 25 C 0.80 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 45 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 720 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Marking device Case style D PAK (TO-263AB) 15TQ060S 1000 1000 T = 150 C J 100 T = 150 C J T = 125 C J T = 125 C J T = 25 C J 10 T = 100 C J 1 T = 75 C J 0.1 T = 50 C J 0.01 T = 25 C J 0.001 0 0.4 0.8 1.2 1.6 2.0 010 20 30 40 50 60 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 27-Oct-17 Document Number: 94927 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 100 10 1 I - Instantaneous Forward F Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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