VS-16CTQ100STRL-M3 Vishay

Hot VS-16CTQ100STRL-M3 electronic component of Vishay
VS-16CTQ100STRL-M3 Vishay
VS-16CTQ100STRL-M3 Schottky Diodes & Rectifiers
VS-16CTQ100STRL-M3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VS-16CTQ100STRL-M3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-16CTQ100STRL-M3 Schottky Diodes & Rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

Part No. VS-16CTQ100STRL-M3
Manufacturer: Vishay
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers Schottky - D2PAK-e3
Datasheet: VS-16CTQ100STRL-M3 Datasheet (PDF)
Price (USD)
605: USD 0.4302 ea
Line Total: USD 260.27 
Availability : 3880
  
Ship by Wed. 12 Nov to Tue. 18 Nov
QtyUnit Price
605$ 0.4302
613$ 0.4247
613$ 0.4244
619$ 0.4201
800$ 0.419

Availability 3880
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 605
Multiples : 1
QtyUnit Price
605$ 0.4302
613$ 0.4247
613$ 0.4244
619$ 0.4201
800$ 0.419


Availability 570
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.2472
10$ 2.0616
30$ 1.6713
100$ 1.4626
500$ 1.3141
800$ 1.2728


Availability 4489
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.3125
10$ 1.0548
100$ 0.9537
500$ 0.7898
800$ 0.7601
4800$ 0.759

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VS-16CTQ100STRL-M3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VS-16CTQ100STRL-M3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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VS-16CTQ...S-M3, VS-16CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 8 A FEATURES 175 C T operation J Center tap configuration Low forward voltage drop 2 High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 1 3 2 strength and moisture resistance 2 D PAK (TO-263AB) 3 TO-262AA High frequency operation Base Base Guard ring for enhanced ruggedness and long term common common reliability cathode cathode 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 1 1 please see www.vishay.com/doc 99912 3 3 Common Common Anode cathode Anode Anode Anode cathode DESCRIPTION VS-16CTQ...S-M3 VS-16CTQ...-1-M3 This center tap Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary PRIMARY CHARACTERISTICS barrier technology allows for reliable operation up to 175 C I 2 x 8 A F(AV) junction temperature. Typical applications are in switching V 60 V, 80 V, 100 V R power supplies, converters, freewheeling diodes, and V at I 0.58 V reverse battery protection. F F I 7.0 mA at 125 C RM T max. 175 C J E 7.5 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 16 A F(AV) V 60 to 100 V RRM I t = 5 s sine 850 A FSM p V 8 A , T = 125 C (per leg) 0.58 V F pk J T Range -55 to +175 C J VOLTAGE RATINGS VS-16CTQ060S-M3 VS-16CTQ080S-M3 VS-16CTQ100S-M3 PARAMETER SYMBOL UNITS VS-16CTQ060-1-M3 VS-16CTQ080-1-M3 VS-16CTQ100-1-M3 Maximum DC reverse voltage V R 60 80 100 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 94929 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-16CTQ...S-M3, VS-16CTQ...-1-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average per leg 8 forward current I 50 % duty cycle at T = 148 C, rectangular waveform A F(AV) C per device 16 See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 850 non-repetitive surge current per leg I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse 275 See fig. 7 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 0.50 A, L = 60 mH 7.50 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 0.50 A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 8 A 0.72 T = 25 C J 16 A 0.88 Maximum forward voltage drop per leg (1) V V FM See fig. 1 8 A 0.58 T = 125 C J 16 A 0.69 Maximum reverse leakage current per leg T = 25 C 0.55 J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 7.0 J Threshold voltage V 0.415 V F(TO) T = T maximum J J Forward slope resistance r 11.07 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 500 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, 3.25 junction to case per leg R DC operation thJC Maximum thermal resistance, 1.63 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 2 Case style D PAK (TO-263AB) 16CTQ...S Marking device Case style TO-262AA 16CTQ...-1 Revision: 27-Oct-17 Document Number: 94929 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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