VS-175BGQ030HF4 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 175 A FEATURES 150 C max. operating junction temperature High frequency operation Cathode Anode Ultralow forward voltage drop Continuous high current operation Guard ring for enhanced ruggedness and long term reliability Screw mounting only PowerTab AEC-Q101 qualified PowerTab package PRODUCT SUMMARY Material categorization: for definitions of compliance Package PowerTab please see www.vishay.com/doc 99912 I 175 A F(AV) DESCRIPTION V 30 V R The VS-175BGQ030HF4 Schottky rectifier has been V at I 0.52 V F F optimized for ultralow forward voltage drop specifically for I 650 mA at 125 C RM low voltage output in high current AC/DC power supplies. T max. 150 C The proprietary barrier technology allows for reliable J operation up to 150 C junction temperature. Typical Diode variation Single die applications are in switching power supplies, converters, E 80 mJ AS reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 175 A I F(AV) T 97 C C V 30 V RRM I t = 5 s sine 7400 A FSM p 175 A (typical) 0.47 V pk V F T 150 C J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-175BGQ030HF4UNITS Maximum DC reverse voltage V R 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 97 C, rectangular waveform 175 A F(AV) C Following any rated load 5 s sine or 3 s rect. pulse 7400 Maximum peak one cycle I condition and with rated A FSM non-repetitive surge current 10 ms sine or 6 ms rect. pulse 1400 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 12 A, L = 1.12 mH 80 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 12 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 16-Jun-15 Document Number: 93804 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-175BGQ030HF4 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 100 A 0.47 0.49 T = 25 C J 175 A 0.55 0.59 (1) Forward voltage drop V V FM 100 A 0.36 0.39 T = 150 C J 175 A 0.47 0.52 T = 125 C, V = 15 V 160 220 J R T = 150 C, V = 30 V 1400 2000 J R (1) Reverse leakage current I mA RM T = 25 C 1.3 4.5 J V = Rated V R R T = 125 C 450 650 J Maximum junction capacitance C V = 5 V , (test signal range 100 kHz to 1 MHz), 25 C 8500 pF T R DC Typical series inductance L Measured from tab to mounting plane 3.5 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to +150 C J Stg temperature range Maximum thermal resistance, R DC operation 0.35 thJC junction to case C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.20 thCS case to heatsink 5g Approximate weight 0.18 oz. minimum 1.2 (10) N m Mounting torque (lbf in) maximum 2.4 (20) Marking device Case style PowerTab 175BGQ030H 1000 10 000 1000 150 C 125 C 100 100 T = 150 C J 100 C 75 C 10 50 C 10 1 25 C T = 125 C 0.1 J T = 25 C J 0.01 1 0 5 10 15 20 25 30 0.0 0.2 0.4 0.6 0.8 1.0 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 16-Jun-15 Document Number: 93804 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (mA) R