VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 200 A
FEATURES
175 C T operation
J
Lug Lug
terminal terminal
Center tap module
anode 1 anode 2
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
UL approved file E222165
TO-244 Designed and qualified for industrial level
Base common cathode
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS
The VS-201CNQ045PbF center tap Schottky rectifier
I 200 A
F(AV)
module has been optimized for low reverse leakage at high
V 45 V
R temperature. The proprietary barrier technology allows
for reliable operation up to 175 C junction temperature.
Package TO-244
Typical applications are in high current switching power
Circuit configuration Two diodes common cathode
supplies, converters, freewheeling diodes, welding, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I Rectangular waveform 200 A
F(AV)
V 45 V
RRM
I t = 5 s sine 16 000 A
FSM p
V 100 A , T = 125 C (per leg) 0.58 V
F pk J
T Range -55 to +175 C
J
VOLTAGE RATINGS
PARAMETER SYMBOL VS-201CNQ045PbF UNITS
Maximum DC reverse voltage V
R
45 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS
Maximum average
per device 200
forward current I 50 % duty cycle at T = 146 C, rectangular waveform A
F(AV) C
per leg 100
See fig. 5
Maximum peak one cycle
5 s sine or 3 s rect. pulse Following any rated 16 000
non-repetitive surge current per leg I load condition and with A
FSM
rated V applied
10 ms sine or 6 ms rect. pulse 2000
See fig. 7 RRM
Non-repetitive avalanche energy per leg E T = 25 C, I = 17 A, L = 1 mH 145 mJ
AS J AS
Current decaying linearly to zero in 1 s
Repetitive avalanche current per leg I 20 A
AR
Frequency limited by T maximum V = 1.5 x V typical
J A R
Revision: 09-May-17 Document Number: 94154
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-201CNQ045PbF
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
100 A 0.67
T = 25 C
J
200 A 0.81
Maximum forward voltage drop per leg
(1)
V V
FM
See fig. 1
100 A 0.58
T = 125 C
J
200 A 0.71
T = 25 C 10
J
Maximum reverse leakage current per leg
(1)
I V = Rated V mA
RM R R
See fig. 2
T = 125 C 90
J
Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 5200 pF
T R DC
Typical series inductance per leg L From top of terminal hole to mounting plane 7.0 nH
S
Maximum voltage rate of change dV/dt Rated V 10 000 V/s
R
Note
(1)
Pulse width < 300 s, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T , T - 55 - 175 C
J Stg
per leg - - 0.38
Thermal resistance, junction to case R
thJC
per module - - 0.19 C/W
Thermal resistance, case to heatsink R -0.10-
thCS
68 g
Weight - -
2.4 oz.
Mounting torque 35.4 (4) - 53.1 (6)
lbf in
Mounting torque center hole 30 (3.4) - 40 (4.6)
(N m)
Terminal torque 30 (3.4) - 44.2 (5)
Vertical pull - - 80
lbf in
2" lever pull - - 35
Revision: 09-May-17 Document Number: 94154
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000