Product Information

VS-20TQ045S-M3

VS-20TQ045S-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5985 ea
Line Total: USD 1.6

8142 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14790 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.8647
10 : USD 0.7722
100 : USD 0.763
500 : USD 0.762
1000 : USD 0.7358
2000 : USD 0.7211
5000 : USD 0.7211
10000 : USD 0.7211

8142 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.5985
10 : USD 1.196
100 : USD 0.9856
500 : USD 0.8717
1000 : USD 0.7556
2000 : USD 0.7142
5000 : USD 0.713
10000 : USD 0.6796

     
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VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 20 A FEATURES Base 150 C T operation J cathode Low forward voltage drop 2 High frequency operation High purity, high temperature epoxy 2 encapsulation for enhanced mechanical 1 strength and moisture resistance 1 3 3 Guard ring for enhanced ruggedness and long term N/C Anode 2 D PAK (TO-263AB) reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C PRIMARY CHARACTERISTICS Designed and qualified according to JEDEC -JESD 47 I 20 A F(AV) Material categorization: for definitions of compliance V 35 V, 40 V, 45 V R please see www.vishay.com/doc 99912 V at I 0.51 V F F I 105 mA at 125 C RM DESCRIPTION T max. 150 C J The VS-20TQ... Schottky rectifier series has been optimized E 27 mJ AS for very low forward voltage drop, with moderate leakage. 2 Package D PAK (TO-263AB) The proprietary barrier technology allows for reliable Circuit configuration Single operation up to 150 C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V Range 35 to 45 V RRM I t = 5 s sine 1800 A FSM p V 20 A , T = 125 C 0.51 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-20TQ035S-M3VS-20TQ040S-M3VS-20TQ045S-M3UNITS Maximum DC reverse voltage V R 35 40 45 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle at T = 116 C, rectangular waveform 20 F(AV) C See fig. 5 A Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 1800 non-repetitive surge current I condition and with rated FSM 10 ms sine or 6 ms rect. pulse 400 See fig. 7 V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 4 A, L = 3.40 mH 27 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 4A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 02-Nov-17 Document Number: 94931 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-20TQ035S-M3, VS-20TQ040S-M3, VS-20TQ045S-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.57 T = 25 C J 40 A 0.73 Maximum forward voltage drop (1) V V FM See fig. 1 20 A 0.51 T = 125 C J 40 A 0.67 T = 25 C 2.7 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 105 J Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 1400 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 1.50 thJC junction to case See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth, and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 20TQ035S 2 Marking device Case style D PAK (TO-263AB) 20TQ040S 20TQ045S T = 150 C J T = 125 C J T = 100 C J T = 150 C J T = 125 C J T = 75 C J T = 25 C J T = 50 C J T = 25 C J 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 051105 20 2530 35 40 45 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R FM Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 02-Nov-17 Document Number: 94931 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1000 1000 100 100 10 10 1 0.1 1 0.01 0.1 0.001 I Instantaneous F - Forward Current (A) I - Reverse Current (mA) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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