X-On Electronics has gained recognition as a prominent supplier of VS-30CTH03-M3 rectifiers across the USA, India, Europe, Australia, and various other global locations. VS-30CTH03-M3 rectifiers are a product manufactured by Vishay. We provide cost-effective solutions for rectifiers, ensuring timely deliveries around the world.

VS-30CTH03-M3

VS-30CTH03-M3 electronic component of Vishay
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Part No.VS-30CTH03-M3
Manufacturer: Vishay
Category:Rectifiers
Description: Rectifiers 300V 30A TO-220 Fred Pt
Datasheet: VS-30CTH03-M3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.1411 ea
Line Total: USD 2.14

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8823 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.1411
10 : USD 1.6139
100 : USD 1.521
500 : USD 1.3731
1000 : USD 1.3244

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Tradename
Cnhts
Hts Code
Mxhts
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VS-30CTH03-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 15 A FRED Pt FEATURES Base common Hyperfast recovery time cathode 2 Low forward voltage drop 175 C operating junction temperature Low leakage current 1 Designed and qualified according to JEDEC -JESD 47 2 2 Common Material categorization: for definitions of compliance 3 cathode Anode Anode 3L TO-220AB please see www.vishay.com/doc 99912 13 DESCRIPTION / APPLICATIONS 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward PRIMARY CHARACTERISTICS voltage drop and hyperfast recovery time. Package 3L TO-220AB The planar structure and the platinum doped life time I 2 x 15 A F(AV) control, guarantee the best overall performance, V 300 V R ruggedness and reliability characteristics. V at I 0.85 V F F These devices are intended for use in the output rectification t typ. See Recovery table rr stage of SMPS, UPS, DC/DC converters as well T max. 175 C J as freewheeling diodes in low voltage inverters and chopper Circuit configuration Common cathode motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 300 V RRM per diode T = 153 C 15 C Average rectified forward current I F(AV) per device 30 A Non-repetitive peak surge current I T = 25 C 150 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 300 - - R blocking voltage V R V I = 15 A - 1.0 1.25 F Forward voltage V F I = 15 A, T = 125 C - 0.85 0.95 F J V = V rated - - 40 R R Reverse leakage current I A R T = 125 C, V = V rated - 8 200 J R R Junction capacitance C V = 300 V - 38 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S revision: 27-Nov-2018 Document Number: 96198 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30CTH03-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) C PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - - 36 F F R I = 1 A, dI /dt = 100 A/s, V = 30 V - - 30 F F R Reverse recovery time t ns rr T = 25 C -33 - J T = 125 C - 48 - J I = 15 A F T = 25 C - 2.8 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 6.5 - J V = 200 V R T = 25 C - 46 - J Reverse recovery charge Q nC rr T = 125 C - 160 - J THERMAL MECHANICAL SPECIFICATIONS PARAMETER SYMBOLMIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -65 - 175 C J Stg Thermal resistance, junction to case per diode R -- 1.4 C/W thJC Marking device Case style 3L TO-220AB 30CTH03 100 100 T = 175 C J T = 150 C J 10 T = 125 C J T = 100 C T = 175 C 1 J J T = 125 C J 10 T = 75 C T = 25 C J J 0.1 T = 50 C J T = 25 C 0.01 J 0.001 1 0 50 100 150 200 250 300 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 100 T = 25 C J 10 0 10050 150200250300 V - Reverse Voltage (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage revision: 27-Nov-2018 Document Number: 96198 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward F Current (A) C - Junction Capacitance (pF) T I - Reverse Current (A) R

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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