Product Information

VS-30TPS16-M3

VS-30TPS16-M3 electronic component of Vishay

Datasheet
SCRs New Input Thyristor - TO-247-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2315 ea
Line Total: USD 3.23

377 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
377 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 3.2315
10 : USD 2.806
25 : USD 2.5415
100 : USD 2.1965
250 : USD 2.139
500 : USD 1.932
1000 : USD 1.725

154 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 4.628
5 : USD 3.562
13 : USD 3.367
100 : USD 3.302

     
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VS-30TPS16-M3 www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 High voltage (up to 1600 V) (A) Designed and qualified according to JEDEC -JESD 47 1 125 C max. operating junction temperature 2 Available Material categorization: 3 for definitions of compliance please see 1 (K) (G) 3 TO-247AC 3L www.vishay.com/doc 99912 APPLICATIONS Typical usage is in input rectification crowbar (soft start) PRIMARY CHARACTERISTICS and AC switch in motor control, UPS, welding and battery I 20 A T(AV) charge V /V 1600 V DRM RRM V 1.3 V TM DESCRIPTION I 45 mA GT The VS-30TPS16... high voltage series of silicon controlled T -40 C to +125 C J rectifiers are specifically designed for medium power Package TO-247AC 3L switching and phase control applications. The glass Circuit configuration Single SCR passivation technology used has reliable operation up to 125 C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 20 T(AV) A I 30 RMS V /V 1600 V RRM DRM I 300 A TSM V 20 A, T = 25 C 1.3 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-30TPS16-M3 1600 1700 10 Revision: 26-Feb-2019 Document Number: 94387 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-30TPS16-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 95 C, 180 conduction half sine wave 20 T(AV) C Maximum RMS on-state current I 30 RMS A 10 ms sine pulse, rated V applied 250 RRM Maximum peak, one-cycle, I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 310 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 4420 A s Maximum on-state voltage drop V 20 A, T = 25 C 1.3 V TM J On-state slope resistance r 12 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage I /I V = rated V /V RM DM R RRM DRM current T = 125 C 10 J mA Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 150 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R - k = open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = -10 C 60 J Maximum required DC gate current to I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J trigger Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = -10 C 2.5 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 26-Feb-2019 Document Number: 94387 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
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DLE
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