X-On Electronics has gained recognition as a prominent supplier of VS-30TPS08PBF scrs across the USA, India, Europe, Australia, and various other global locations. VS-30TPS08PBF scrs are a product manufactured by Vishay. We provide cost-effective solutions for scrs, ensuring timely deliveries around the world.

VS-30TPS08PBF

VS-30TPS08PBF electronic component of Vishay
Images are for reference only
See Product Specifications
Part No.VS-30TPS08PBF
Manufacturer: Vishay
Category:SCRs
Description: Vishay Semiconductors SCRs 800 Volt 30 Amp
Datasheet: VS-30TPS08PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 3.9602
10 : USD 2.7574
25 : USD 2.3592
50 : USD 2.312
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 8.2105
10 : USD 2.7916
100 : USD 2.3913
250 : USD 2.3503
500 : USD 2.0629
1000 : USD 2.0526
2500 : USD 1.7755
N/A

Obsolete
0 - WHS 3

MOQ : 4
Multiples : 1
4 : USD 3.9602
10 : USD 2.7574
25 : USD 2.3592
50 : USD 2.312
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
LoadingGif

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We proudly offer the VS-30TPS08PBF SCRs at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the VS-30TPS08PBF SCRs.

VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 30 A FEATURES 2 (A) Designed and qualified according to JEDEC -JESD47 125 C max. operating junction temperature Material categorization: 3 2 For definitions of compliance please see 1 www.vishay.com/doc 99912 1 (K) (G) 3 Available TO-247AC APPLICATIONS Typical usage is in input rectification crowbar (soft start) PRODUCT SUMMARY and AC switch in motor control, UPS, welding and battery Package TO-247AC charge Diode variation Single SCR I 20 A DESCRIPTION T(AV) V /V 800 V, 1200 V DRM RRM The VS-30TPS... high voltage series of silicon controlled rectifiers are specifically designed for medium power V 1.3 V TM switching and phase control applications. The glass I 45 mA GT passivation technology used has reliable operation up to T -40 C to 125 C J 125 C junction temperature. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 20 T(AV) A I 30 RMS V /V 800/1200 V RRM DRM I 300 A TSM V 20 A, T = 25 C 1.3 V T J dV/dt 500 V/s dI/dt 150 A/s T - 40 to 125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-30TPS08PbF, VS-30TPS08-M3 800 900 10 VS-30TPS12PbF, VS-30TPS12-M3 1200 1300 Revision: 06-Feb-14 Document Number: 94386 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-30TPS..PbF Series, VS-30TPS..-M3 Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 95 C, 180 conduction half sine wave 20 T(AV) C Maximum RMS on-state current I 30 RMS A 10 ms sine pulse, rated V applied 250 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 300 10 ms sine pulse, rated V applied 310 RRM 2 2 2 Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 442 2 2 2 Maximum I t for fusing I t t = 0.1 to 10 ms, no voltage reapplied 4420 A s Maximum on-state voltage drop V 20 A, T = 25 C 1.3 V TM J On-state slope resistance r 12 m t T = 125 C J Threshold voltage V 1.0 V T(TO) T = 25 C 0.5 J Maximum reverse and direct leakage current I /I V = Rated V /V RM DM R RRM DRM T = 125 C 10 J mA Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 150 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 200 L J Maximum rate of rise of off-state voltage dV/dt T = T maximum, linear to 80 % V , R -k = Open 500 V/s J J DRM g Maximum rate of rise of turned-on current dI/dt 150 A/s TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 8.0 GM W Maximum average gate power P 2.0 G(AV) Maximum peak positive gate current + I 1.5 A GM Maximum peak negative gate voltage - V 10 V GM Anode supply = 6 V, resistive load, T = - 10 C 60 J Maximum required DC gate current to trigger I Anode supply = 6 V, resistive load, T = 25 C 45 mA GT J Anode supply = 6 V, resistive load, T = 125 C 20 J Anode supply = 6 V, resistive load, T = - 10 C 2.5 J Maximum required DC gate V Anode supply = 6 V, resistive load, T = 25 C 2.0 GT J voltage to trigger V Anode supply = 6 V, resistive load, T = 125 C 1.0 J Maximum DC gate voltage not to trigger V 0.25 GD T = 125 C, V = Rated value J DRM Maximum DC gate current not to trigger I 2.0 mA GD SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time t T = 25 C 0.9 gt J Typical reverse recovery time t 4 s rr T = 125 C J Typical turn-off time t 110 q Revision: 06-Feb-14 Document Number: 94386 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
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