VS-32CTQ025-M3 Vishay

VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 15 A FEATURES Base 2 common 150 C T operation J cathode Low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength Anode 2 Anode and moisture resistance 13Common 3L TO-220AB cathode Guard ring for enhanced ruggedness and long term reliability Designed and qualified according to JEDEC -JESD 47 PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance I 2 x 15 A F(AV) please see www.vishay.com/doc 99912 V 25 V, 30 V R DESCRIPTION V at I 0.40 V F F The VS-32CTQ... Schottky rectifier series has been I max. 97 mA at 125 C RM optimized for low reverse leakage at high temperature. The T max. 150 C J proprietary barrier technology allows for reliable operation up to 150 C junction temperature. Typical applications are in E 13 mJ AS switching power supplies, converters, freewheeling diodes, Package 3L TO-220AB and reverse battery protection. Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUESUNITS I Rectangular waveform 30 A F(AV) V 25/30 V RRM I t = 5 s sine 900 A FSM p V 15 A , T = 125 C 0.40 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-32CTQ025-M3 VS-32CTQ030-M3 UNITS Maximum DC reverse voltage V R 25 30 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current, I 50 % duty cycle at T = 115 C, rectangular waveform 30 F(AV) C see fig. 5 A 5 s sine or 3 s rect. pulse 900 Following any rated load Maximum peak one cycle non-repetitive I condition and with rated FSM surge current, see fig. 7 10 ms sine or 6 ms rect. pulse V applied 250 RRM Non-repetitive avalanche energy E T = 25 C, I = 1.20 A, L = 11.10 mH 13 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 3A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 17-Aug-17 Document Number: 96278 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-32CTQ025-M3, VS-32CTQ030-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 15 A 0.49 T = 25 C J 30 A 0.58 Maximum forward voltage drop (1) V V FM See fig. 1 15 A 0.40 T = 125 C J 30 A 0.53 T = 25 C 1.75 Maximum reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 125 C 97 J Threshold voltage V 0.233 V F(TO) T = T maximum J J Forward slope resistance r 9.09 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C 1300 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction and storage T , T -55 to 150 C J Stg temperature range Maximum thermal resistance, DC operation R 3.25 thJC junction to case per leg See fig. 4 C/W Typical thermal resistance, R Mounting surface, smooth and greased 0.50 thCS case to heatsink 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) 32CTQ025 Marking device Case style 3L TO-220AB 32CTQ030 Revision: 17-Aug-17 Document Number: 96278 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000