Product Information

VS-40L15CTS-M3

VS-40L15CTS-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - D2PAK-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2306 ea
Line Total: USD 2.23

48 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5456 - WHS 1


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.8315
10 : USD 2.2734
100 : USD 1.8066
500 : USD 1.5506
1000 : USD 1.2406
3000 : USD 1.2273
5000 : USD 1.1761
10000 : USD 1.1626

48 - WHS 2


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 2.2306
10 : USD 1.8391
100 : USD 1.5069
500 : USD 1.3408
1000 : USD 1.1521
3000 : USD 1.1521
5000 : USD 1.1438
10000 : USD 1.1058

     
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VS-40L15CTS-M3, VS-40L15CT-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES 125 C T operation (V < 5 V) J R Center tap module Optimized for OR-ing applications 2 Ultralow forward voltage drop 1 High frequency operation 1 3 2 High purity, high temperature epoxy encapsulation for 2 D PAK (TO-263AB) 3 TO-262AA enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term Base Base common common reliability cathode cathode Meets MSL level 1, per J-STD-020, LF maximum peak 2 2 of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc?99912 1 1 Common 3 3 Common Anode cathode Anode Anode cathode Anode DESCRIPTION VS-40L15CTS-M3 VS-40L15CT-1-M3 The center tap Schottky rectifier module has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier PRIMARY CHARACTERISTICS technology allows for reliable operation up to 125 C I 2 x 20 A F(AV) junction temperature. Typical applications are in parallel V 15 V R switching power supplies, converters, reverse battery V at I 0.33 V F F protection, and redundant power subsystems. I max. 600 mA at 100 C RM T max. 125 C J E 10 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 125 C (per leg, typical) 0.25 V F pk J T -55 to +125 C J VOLTAGE RATINGS VS-40L15CTS-M3 PARAMETER SYMBOLTEST CONDITIONS UNITS VS-40L15CT-1-M3 Maximum DC reverse voltage V R T = 100 C 15 V J Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 95733 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-40L15CTS-M3, VS-40L15CT-1-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS per leg 20 Maximum average forward I 50 % duty cycle at T = 85 C, rectangular waveform F(AV) C current, see fig. 5 per device 40 A 5 s sine or 3 s rect. pulse Following any rated load 700 Maximum peak one cycle non-repetitive I condition and with rated FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse 330 V applied RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 2 A, L = 6 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 19 A -0.41 T = 25 C J 40 A - 0.52 Maximum forward voltage drop per leg (1) V V FM See fig. 1 19 A 0.25 0.33 T = 125 C J 40 A 0.37 0.50 T = 25 C -10 J Reverse leakage current per leg (1) I V = Rated V mA RM R R See fig. 2 T = 100 C - 600 J Threshold voltage V 0.182 V F(TO) T = T maximum J J Forward slope resistance r 7.6 m t Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C - 2000 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8 - nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum junction temperature range T -55 to +125 J C Maximum storage temperature range T -55 to +150 Stg Maximum thermal resistance, DC operation R 1.5 thJC junction to case per leg See fig. 4 Typical thermal resistance, R Mounting surface, smooth and greased 0.50 C/W thCS case to heatsink Maximum thermal resistance, R DC operation 40 thJA junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Case style D PAK (TO-263AB) 40L15CTS Marking device Case style TO-262AA 40L15CT-1 Revision: 27-Oct-17 Document Number: 95733 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
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Vishay / Thin Film
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Vishay Beyschlag
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VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
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Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

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