333 3 VS-6DKH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 2 x 3 A FRED Pt FEATURES Hyperfast recovery time, reduced Q , and soft rr 11 recovery 22 175 C maximum operating junction 33 temperature 4 88 Specific for output and snubber operation 77 Low forward voltage drop 66 Low leakage current 55 AEC-Q101 qualified FlatPAK 5 x 6 Meets MSL level 1 per J-STD-020, LF maximum peak of 260 C 1, 2 7, 8 Material categorization: for definitions of compliance 3, 4 5, 6 please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage 3D Models drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness, and PRIMARY CHARACTERISTICS reliability characteristics. Package FlatPAK 5 x 6 These devices are intended for use in snubber, boost, I 2 x 3 A piezo-injection, as high frequency rectifiers, and F(AV) freewheeling diodes. V 200 V R V at I 0.71 V The extremely optimized stored charge and low recovery F F current minimize the switching losses and reduce power t 25 ns rr (typ.) dissipation in the switching element. T max. 175 C J Circuit configuration Separated cathode MECHANICAL DATA Case: FlatPAK 5 x 6 Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant Terminals: matte tin plated leads, solderable per J-STD-002, meets JESD 201 class 2 whisker test ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM T = 170 C, DC Solderpad per Average rectified forward current I 6 F(AV) device T = 169 C, D = 0.5 Solderpad A per 173 device Non-repetitive peak surge current I T = 25 C, 10 ms sinusoidal pulse FSM J per diode 87 Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 19-Mar-2021 Document Number: 96086 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD DVS-6DKH02HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 200 - - R blocking voltage V R V I = 3 A - 0.88 0.94 F Forward voltage, per diode V F I = 3 A, T = 150 C - 0.71 0.74 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - 2 40 J R R Junction capacitance C V = 200 V - 14 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 20 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 25 F R rr Reverse recovery time t ns rr T = 25 C -15- J T = 125 C - 25 - J I = 3 A F T = 25 C - 2 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 3 - J V = 160 V R T = 25 C - 12 - J Reverse recovery charge Q nC rr T = 125 C - 40 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1)(2) Thermal resistance, junction to ambient, per diode R - 90 103 thJA C/W (3) Thermal resistance, junction to mount, per diode R -2.3 2.6 thJM Notes (1) The heat generated must be less than the thermal conductivity from junction to ambient: dP /dT < 1/ R D J thJA (2) Free air, mounted or recommended copper pad area thermal resistance R - junction to ambient thJA (3) Mounted on infinite heatsink Revision: 19-Mar-2021 Document Number: 96086 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000