Product Information

VS-70TPS12PBF

VS-70TPS12PBF electronic component of Vishay

Datasheet
SCRs 1200 Volt 75 Amp

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 6.7201 ea
Line Total: USD 6.72

770 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
61595 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 29
Multiples : 1
29 : USD 4.2282

770 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 6.7201
10 : USD 5.2654
30 : USD 4.2529
100 : USD 3.9025

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Current Rating
Height
Length
Off-State Leakage Current Vdrm Idrm
Type
Width
Brand
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Factory Pack Quantity :
Subcategory
Taric
Brand Category
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VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors Thyristor High Voltage, Phase Control SCR, 70 A FEATURES 2 (A) High surge capability High voltage input rectification 1 Designed and qualified according to 2 JEDEC -JESD 47 3 Material categorization: for definitions of compliance please se e 1 (K) (G) 3 Super TO-247 www.vishay.com/doc 99912 APPLICATIONS PRIMARY CHARACTERISTICS AC switches I 70 A T(AV) High voltage input rectification (soft start) V /V 1200 V, 1600 V DRM RRM V 1.25 V High current crow-bar TM I 100 mA GT Other phase-control circuits T -40 C to +125 C J Designed to be used with Vishay input diodes, switches, Package Super TO-247 and output rectifiers which are available in identical Circuit configuration Single SCR package outlines DESCRIPTION The VS-70TPS.. PbF high voltage series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES UNITS I Sinusoidal waveform 70 T(AV) A I Lead current limitation 75 RMS V /V Range 1200 to 1600 V RRM DRM I 1100 A TSM V 100 A, T = 25 C 1.4 V T J dV/dt 500 V/s dI/dt 150 A/s T -40 to +125 C J VOLTAGE RATINGS V /V , MAXIMUM V , MAXIMUM RRM DRM RSM I /I RRM DRM REPETITIVE PEAK AND NON-REPETITIVE PEAK PART NUMBER AT 125 C OFF-STATE VOLTAGE REVERSE VOLTAGE mA V V VS-70TPS12PbF 1200 1300 15 VS-70TPS16PbF 1600 1700 Revision: 05-Jun-2020 Document Number: 94391 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average on-state current I T = 82 C, 180 conduction half sine wave 70 T(AV) C Maximum continuous RMS on-state I Lead current limitation 75 T(RMS) current as AC switch A 10 ms sine pulse, rated V applied 930 Maximum peak, one-cycle RRM I TSM non-repetitive surge current 10 ms sine pulse, no voltage reapplied 1100 Initial T = T J J 10 ms sine pulse, rated V applied 4325 RRM 2 2 2 maximum Maximum I t for fusing I t A s 10 ms sine pulse, no voltage reapplied 6115 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 61 150 A s Low level value of threshold voltage V 0.916 T(TO)1 V High level value of threshold voltage V 1.21 T(TO)2 T = 125 C J Low level value of on-state slope resistance r 4.138 t1 m High level value of on-state slope resistance r 3.43 t2 Maximum peak on-state voltage V 100 A, T = 25 C 1.4 V TM J Maximum rate of rise of turned-on current dI/dt T = 25 C 150 A/s J Maximum holding current I Anode supply = 6 V, resistive load, initial I = 1 A, T = 25 C 200 H T J Maximum latching current I Anode supply = 6 V, resistive load, T = 25 C 400 L J mA T = 25 C 1.0 J V = rated V /V R RRM DRM Maximum reverse and direct leakage current I /I RRM DRM T = 125 C (T = T max., linear to 80 % 15 J J J V = R - k = open) DRM g Maximum rate of rise of off-state voltage dV/dt T = 125 C 500 V/s J TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum peak gate power P 10 GM T = 30 s W Maximum average gate power P 2.5 G(AV) Maximum peak gate current I 2.5 A GM Maximum peak negative gate voltage -V 10 GM T = - 40 C 1.8 J V Maximum required DC gate voltage to trigger V T = 25 C Anode supply = 6 V resistive load 1.5 GT J T = 125 C 1.1 J T = - 40 C 150 J Maximum required DC gate current to trigger I T = 25 C Anode supply = 6 V resistive load 100 mA GT J T = 125 C 80 J Maximum DC gate voltage not to trigger V 0.25 V GD T = 125 C, V = rated value J DRM Maximum DC gate current not to trigger I 6mA GD Revision: 05-Jun-2020 Document Number: 94391 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

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