Product Information

Z0405NF 1AA2

Z0405NF 1AA2 electronic component of STMicroelectronics

Datasheet
Triacs 4.0 Amp 800 Volt

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4574 ea
Line Total: USD 0.46

4 - Global Stock
Ships to you between
Tue. 30 Apr to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

Z0405NF 1AA2
STMicroelectronics

1 : USD 0.4588
10 : USD 0.4397
25 : USD 0.4254
50 : USD 0.4169
100 : USD 0.4169
1000 : USD 0.4169

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Series
Mounting Style
Packaging
Off-State Leakage Current Vdrm Idrm
Brand
Factory Pack Quantity :
Current Rating
Cnhts
Hts Code
Product Type
Subcategory
Taric
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Z04 Series STANDARD 4A TRIACS MAIN FEATURES: A2 Symbol Value Unit G I 4A T(RMS) A1 V /V 600 to 800 V DRM RRM I GT (Q ) 3 to 25 mA 1 A1 A2 G DESCRIPTION The Z04 series is suitable for general purpose AC switching applications. They can be found in TO202-3 applications such as touch light dimmers, fan (Z04xxF) controllers, HID lamp ignitors,... Different gate current sensitivities are available, allowing optimized performances when controlled directly from microcontrollers. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit I RMS on-state current (full sine wave) TI = 30C 4 A T(RMS) Tamb = 25C 1 I Non repetitive surge peak on-state F = 50 Hz t = 20 ms 20 A TSM current (full cycle, Tj initial = 25C) F = 60 Hz t = 16.7 ms 21 tp = 10 ms 2.2 A s ItI t Value for fusing Critical rate of rise of on-state current dI/dt F = 120 Hz Tj = 125C 20 A/s I = 2 x I , tr 100 ns G GT I Peak gate current tp = 20 s Tj = 125C 1.2 A GM P Average gate power dissipation Tj = 125C 0.2 W G(AV) T stg Storage junction temperature range - 40 to + 150 C T Operating junction temperature range - 40 to + 125 j July 2003 - Ed: 5 1/6Z04 Series ELECTRICAL CHARACTERISTICS (Tj = 25C, unless otherwise specified) Symbol Test Conditions Quadrant Z04xx Unit 02 05 09 10 I (1) mA ALL MAX. 3 5 10 25 GT V = 12 V R = 30 D L V ALL MAX. 1.3 V GT V V = V R = 3.3 k Tj = 125C ALL MIN. 0.2 V GD D DRM L I (2) I = 50 mA MAX. 3 5 10 25 mA H T I I = 1.2 I I - III - IV MAX. 6 10 15 25 mA L G GT II 12 15 25 50 dV/dt (2) V = 67 %V gate open Tj = 110C MIN. 10 20 100 200 V/s D DRM (dV/dt)c (2) (dI/dt)c = 1.8 A/ms Tj = 110C MIN. 0.5 1 2 5 V/s STATIC CHARACTERISTICS Symbol Test Conditions Value Unit V (2) I = 5.5 A tp = 380 s Tj = 25C MAX. 2.0 V TM TM V (2) Threshold voltage Tj = 125C MAX. 0.95 V to R (2) Dynamic resistance Tj = 125C MAX. 180 m d I V = V Tj = 25C 5A DRM DRM RRM MAX. I Tj = 125C 0.5 mA RRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 THERMAL RESISTANCES Symbol Parameter Value Unit R Junction to lead (AC) C/W 15 th(j-l) R Junction to ambient 100 C/W th(j-a) 2/6

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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