VS-80CPQ150-N3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 40 A Base FEATURES common cathode 175 C T operation J 2 Low forward voltage drop High frequency operation High purity, high temperature epoxy 1 encapsulation for enhanced mechanical 2 strength and moisture resistance 3 Guard ring for enhanced ruggedness and long term 13 Anode Anode reliability TO-247AC 3L 2 1 2 Common Designed and qualified according to JEDEC -JESD 47 cathode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS DESCRIPTION I 2 x 40 A F(AV) V 150 V R The VS-80CPQ150... center tap Schottky rectifier series has V at I 0.71 V been optimized for low reverse leakage at high temperature. F F The proprietary barrier technology allows for reliable I max. 26 mA at 125 C RM operation up to 175 C junction temperature. Typical T max. 175 C J applications are in switching power supplies, converters E 0.5 mJ AS freewheeling diodes, and reverse battery protection. Package TO-247AC 3L Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 80 A F(AV) V 150 V RRM I t = 5 s sine 1930 A FSM p V 40 A , T = 125 C (per leg) 0.71 V F pk J T -55 to +175 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-80CPQ150-N3 UNITS Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS per leg 40 Maximum average forward I 50 % duty cycle at T = 150 C, rectangular waveform F(AV) C current, see fig. 5 per device 80 A Following any rated 5 s sine or 3 s rect. pulse 1930 Maximum peak one cycle non-repetitive I load condition and with FSM surge current per leg, see fig. 7 10 ms sine or 6 ms rect. pulse rated V applied 500 RRM Non-repetitive avalanche energy per leg E T = 25 C, I = 1.0 A, L = 1 mH 0.5 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 03-Jan-18 Document Number: 96465 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-80CPQ150-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP.MAX.UNITS 40 A 0.82 0.86 T = 25 C J Maximum forward 80 A 0.97 1.09 (1) voltage drop per leg V V FM 40 A 0.67 0.71 See fig. 1 T = 125 C J 80 A 0.80 0.85 Maximum reverse T = 25 C 10 200 A J leakage current per leg I V = Rated V RM R R T = 125 C 12 26 mA J See fig. 2 Typical junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 1100 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body - 7.5 nH S Maximum voltage rate of change dV/dt Rated V - 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and storage T , T -55 to 175 C J Stg temperature range Maximum thermal resistance, DC operation 0.6 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, DC operation 0.3 C/W junction to case per package Typical thermal resistance, R Mounting surface, smooth and greased 0.24 thCS case to heatsink 6g Approximate weight 0.21 oz. minimum 6 (5) kgf cm Mounting torque (lbf in) maximum 12 (10) Marking device Case style TO-247AC 3L 80CPQ150 Revision: 03-Jan-18 Document Number: 96465 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000