VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors Three Phase Controlled Bridge (Power Modules), 55 A to 110 A FEATURES Package fully compatible with the industry standard INT-A-PAK power modules series High thermal conductivity package, electrically insulated case Excellent power volume ratio 4000 V isolating voltage RMS UL E78996 approved Designed and qualified for industrial level MTKMTK Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION PRIMARY CHARACTERISTICS I 55 A to 110 A O A range of extremely compact, encapsulated three phase V 800 V to 1600 V RRM controlled bridge rectifiers offering efficient and reliable Package MTK operation. They are intended for use in general purpose and Circuit configuration Three phase bridge heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS VALUES VALUES VALUES SYMBOL CHARACTERISTICS UNITS 5.MT...K 9.MT...K 11.MT...K 55 90 110 A I O T 85 85 85 C C 50 Hz 390 950 1130 I A FSM 60 Hz 410 1000 1180 50 Hz 770 4525 6380 2 2 I t A s 60 Hz 700 4130 5830 2 2 I t 7700 45 250 63 800 A s V Range 800 to 1600 V RRM T Range -40 to +125 C Stg T Range -40 to +125 C J ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM DRM V , MAXIMUM V , MAXIMUM I /I , RRM RSM RRM DRM REPETITIVE PEAK TYPE VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK MAXIMUM OFF-STATE VOLTAGE, NUMBER CODE REVERSE VOLTAGE REVERSE VOLTAGE AT T = 125 C J GATE OPEN CIRCUIT V V mA V 80 800 900 800 100 1000 1100 1000 VS-5.MT...K 120 1200 1300 1200 10 140 1400 1500 1400 160 1600 1700 1600 80 800 900 800 100 1000 1100 1000 VS-9.MT...K 120 1200 1300 1200 20 VS-11.MT...K 140 1400 1500 1400 160 1600 1700 1600 Revision: 28-Nov-2019 Document Number: 94353 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series www.vishay.com Vishay Semiconductors FORWARD CONDUCTION VALUES VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 5.MT...K 9.MT...K 11.MT...K 55 90 110 A Maximum DC output current at I 120 rect. conduction angle O case temperature 85 85 85 C t = 10 ms 390 950 1130 No voltage Maximum peak, one-cycle reapplied t = 8.3 ms 410 1000 1180 forward, non-repetitive on state I A TSM t = 10 ms 330 800 950 100 % V surge current RRM reapplied t = 8.3 ms 345 840 1000 Initial T = T max. J J t = 10 ms 770 4525 6380 No voltage reapplied t = 8.3 ms 700 4130 5830 2 2 2 Maximum I t for fusing I t A s t = 10 ms 540 3200 4510 100 % V RRM reapplied t = 8.3 ms 500 2920 4120 2 2 2 Maximum I t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 7700 45 250 63 800 A s Low level value of threshold V (16.7 % x x I < I < x I ), T maximum 1.17 1.09 1.04 T(TO)1 T(AV) T(AV) J voltage V High level value of threshold V (I > x I ), T maximum 1.45 1.27 1.27 T(TO)2 T(AV) J voltage Low level value on-state slope r (16.7 % x x I < I < x I ), T maximum 12.40 4.10 3.93 t1 T(AV) T(AV) J resistance m High level value on-state slope r (I > x I ), T maximum 11.04 3.59 3.37 t2 T(AV) J resistance Maximum on-state voltage drop V I = 150 A, T = 25 C, t = 400 s single junction 2.68 1.65 1.57 V TM pk J p Maximum non-repetitive T = 25 C, from 0.67 V , I = x I , J DRM TM T(AV) dI/dt 150 A/s rate of rise of turned on current I = 500 mA, t < 0.5 s, t > 6 s g r p T = 25 C, anode supply = 6 V, resistive load, J Maximum holding current I 200 H gate open circuit mA Maximum latching current I T = 25 C, anode supply = 6 V, resistive load 400 L J BLOCKING VALUES VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 5.MT...K 9.MT...K 11.MT...K RMS isolation voltage V T = 25 C all terminal shorted, f = 50 Hz, t = 1 s 4000 V ISOL J Maximum critical rate of rise of T = T maximum, linear to 0.67 V , J J DRM (1) dV/dt 500 V/s off-state voltage gate open circuit Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i. e. 113MT160KBS90 TRIGGERING VALUES VALUES VALUES PARAMETER SYMBOL TEST CONDITIONS UNITS 5.MT...K 9.MT...K 11.MT...K Maximum peak gate power P 10 GM W Maximum average gate power P 2.5 G(AV) T = T maximum Maximum peak gate current I J J 2.5 A GM Maximum peak negative - V 10 GT gate voltage T = -40 C 4.0 J V Maximum required DC gate V T = 25 C 2.5 GT J voltage to trigger T = 125 C 1.7 J Anode supply = 6 V, resistive load T = -40 C 270 J Maximum required DC gate I T = 25 C 150 mA GT J current to trigger T = 125 C 80 J Maximum gate voltage V 0.25 V GD that will not trigger T = T maximum, rated V applied J J DRM Maximum gate current I 6mA GD that will not trigger Revision: 28-Nov-2019 Document Number: 94353 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000