VS-APH3006LHN3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 30 A FRED Pt FEATURES Low forward voltage drop Hyperfast soft recovery time Base cathode 175 C operating junction temperature 2, 4 Designed and qualified according to commercial qualification 1 AEC-Q101 qualified, meets JESD 201 class 2 2 whisker test 3 3 1 Anode Anode TO-247AD 3L Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS PRODUCT SUMMARY Hyperfast recovery rectifiers designed with optimized Package TO-247AD 3L performance of forward voltage drop, hyperfast recovery I 30 A time, and soft recovery. F(AV) V 600 V The planar structure and the platinum doped life time control R guarantee the best overall performance, ruggedness and V at I 1.4 V F F reliability characteristics. t typ. 26 ns rr These devices are intended for use in PFC Boost stage in T max. 175 C J the AC/DC section of SMPS, inverters or as freewheeling Diode variation Single die diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 112 C 30 F(AV) C A T = 25 C, t = 8.3 ms half sine wave C p Non-repetitive peak surge current I 240 FSM connecting two anode pins Operating junction and storage T , T -55 to +175 C J Stg temperatures ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 30 A - 2.0 2.65 F Forward voltage V F I = 30 A, T = 150 C - 1.4 1.8 F J V = V rated - 0.02 30 R R Reverse leakage current I A R T = 150 C, V = V rated - - 300 J R R Junction capacitance C V = 600 V - 20 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 01-Feb-17 Document Number: 95956 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-APH3006LHN3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 50 A/s, V = 30 V - 26 - F F R Reverse recovery time t T = 25 C -26- ns rr J T = 125 C - 70 - J I = 30 A F T = 25 C - 3.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 7.6 - J V = 200 V R T = 25 C - 50 - J Reverse recovery charge Q nC rr T = 125 C - 280 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -55 - 175 C J Stg temperature range Thermal resistance, R -0.71.1C/W thJC junction to case Thermal resistance, R Typical socket mount - - 70 thJA junction to ambient per leg Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case to heat sink greased -5.5 - g Weight -0.2 - oz. 1.2 2.4 kgf cm Mounting torque - (10) (20) (lbf in) Marking device Case style TO-247AD 3L APH3006LH Revision: 01-Feb-17 Document Number: 95956 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000