VS-CPV363M4UPbF www.vishay.com Vishay Semiconductors IGBT SIP Module (Ultrafast IGBT) FEATURES Fully isolated printed circuit board mount package Switching-loss rating includes all tail losses HEXFRED soft ultrafast diodes Optimized for medium speed, see fig. 1 for current vs. frequency curve IMS-2 UL approved file E78996 Designed and qualified for industrial level PRIMARY CHARACTERISTICS Material categorization: for definitions of compliance OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE please see www.vishay.com/doc 99912 V 600 V CES I per phase (2.1 kW total) DESCRIPTION RMS 7.1 A RMS with T = 90 C C The IGBT technology is the key to Vishays Semiconductors T 125 C J advanced line of IMS (Insulated Metal Substrate) power Supply voltage 360 V DC modules. These modules are more efficient than Power factor 0.8 comparable bipolar transistor modules, while at the same Modulation depth (see fig. 1) 115 % time having the simpler gate-drive requirements of the V (typical) CE(on) 1.7 V familiar power MOSFET. This superior technology has now at I = 6.8 A, 25 C C been coupled to a state of the art materials system that Speed 8 kHz to 30 kHz maximizes power throughput with low thermal resistance. Package SIP This package is highly suited to motor drive applications and Circuit configuration Three phase inverter where space is at a premium. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Collector to emitter voltage V 600 V CES T = 25 C 13 C Continuous collector current, each IGBT I C T = 100 C 6.8 C (1) Pulsed collector current I 40 CM A (2) Clamped inductive load current I 40 LM Diode continuous forward current I T = 100 C 6.1 F C Diode maximum forward current I 40 FM Gate to emitter voltage V 20 V GE Isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL RMS T = 25 C 36 C Maximum power dissipation, each IGBT P W D = 100 C 14 T C Operating junction and storage temperature range T , T -40 to +150 J Stg C Soldering temperature For 10 s, (0.063 (1.6 mm) from case) 300 5 to 7 lbf in Mounting torque 6-32 or M3 screw (0.55 to 0.8) (N m) Notes (1) Repetitive rating V = 20 V, pulse width limited by maximum junction temperature (see fig. 20) GE (2) V = 80 % (V ), V = 20 V, L = 10 H, R = 23 (see fig. 19) CC CES GE G Revision: 25-Oct-17 Document Number: 94486 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-CPV363M4UPbF www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTYP. MAX. UNITS Junction-to-case, each IGBT, one IGBT in conduction R (IGBT) - 3.5 thJC Junction-to-case, each diode, one diode in conduction R (DIODE) - 5.5 C/W thJC Case to sink, flat, greased surface R (MODULE) 0.10 - thCS 20 - g Weight of module 0.7 - oz. ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS (1) Collector to emitter breakdown voltage V V = 0 V, I = 250 A 600 - - V (BR)CES GE C Temperature coeff. of breakdown V T V = 0 V, I = 1.0 mA - 0.63 - V/C (BR)CES J GE C voltage I = 6.8 A - 1.70 2.2 C V = 15 V GE Collector to emitter saturation voltage V I = 13 A - 2.00 - CE(on) C See fig. 2, 5 V I = 6.8 A, T = 150 C - 1.70 - C J Gate threshold voltage V 3.0 - 6.0 GE(th) V = V , I = 250 A CE GE C Temperature coeff. of threshold voltage V /T -- 11 - mV/C GE(th) J (2) Forward transconductance g V = 100 V, I = 6.8 A 4.0 6.0 - S fe CE C V = 0 V, V = 600 V - - 250 GE CE Zero gate voltage collector current I A CES V = 0 V, V = 600 V, T = 150 C - - 2500 GE CE J I = 12 A -1.4 1.7 C Diode forward voltage drop V See fig. 13 V FM I = 12 A, T = 150 C - 1.3 1.6 C J Gate to emitter leakage current I V = 20 V - - 100 nA GES GE Notes (1) Pulse width 80 s, duty factor 0.1 % (2) Pulse width 5.0 s single shot SWITCHING CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q -53 79 g I = 6.8 A C Gate to emitter charge (turn-on) Q -7.7 12 nC ge V = 400 V CC See fig. 8 Gate to collector charge (turn-on) Q -21 31 gc Turn-on delay time t -43 - d(on) Rise time t T = 25 C -14 - J r ns I = 6.8 A, V = 480 V C CC Turn-off delay time t - 95 140 d(off) V = 15 V, R = 23 GE G Fall time t - 83 190 f Energy losses include tail and diode Turn-on switching loss E -0.17- on reverse recovery. Turn-off switching loss E See fig. 9, 10, 11, 18 -0.15- mJ off Total switching loss E - 0.32 0.45 ts Turn-on delay time t T = 150 C -41 - d(on) J I = 6.8 A, V = 480 V C CC Rise time t -16 - r ns V = 15 V, R = 23 GE G Turn-off delay time t -110 - d(off) Energy losses include tail and Fall time t -230 - f diode reverse recovery Total switching loss E See fig. 9, 10, 11, 18 -0.52- mJ ts Input capacitance C V = 0 V - 1100 - ies GE V = 30 V CC Output capacitance C -73 - oes pF = 1.0 MHz Reverse transfer capacitance C -14 - res See fig. 7 T = 25 C -42 60 J Diode reverse recovery time t See fig. 14 ns rr T = 125 C - 83 120 J T = 25 C -3.5 6.0 J Diode peak reverse recovery charge I See fig. 15 A rr I = 12 A F T = 125 C - 5.6 10 J V = 200 V R T = 25 C - 80 180 J dI/dt = 200 A/s Diode reverse recovery charge Q See fig. 16 nC rr T = 125 C - 220 600 J T = 25 C -180 - Diode peak rate of fall of recovery J dI /dt See fig. 17 A/s (rec)M during t b T = 125 C - 116 - J Revision: 25-Oct-17 Document Number: 94486 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000