Product Information

STGWA25H120F2

STGWA25H120F2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4712 ea
Line Total: USD 4.47

5238 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5238 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

STGWA25H120F2
STMicroelectronics

1 : USD 3.8988
30 : USD 3.855
120 : USD 3.4475
510 : USD 3.435
600 : USD 3.3663
1020 : USD 3.3663
1200 : USD 3.3663

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Continuous Collector Current
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current V = 2.1 V (typ.) I = 25 A CE(sat) C 5 s minimum short circuit withstand time at T =150 C J Tight parameters distribution 2 7 2 ORQJ OHDGV 7 Safe paralleling Low thermal resistance Applications Figure 1. Internal schematic diagram C (2) Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters G (1) Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series SC12850 E (3) of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive V temperature coefficient CE(sat) and very tight parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packaging STGW25H120F2 G25H120F2 TO-247 Tube STGWA25H120F2 G25H120F2 TO-247 long leads Tube March 2015 DocID026003 Rev 4 1/17 This is information on a product in full production. www.st.com 17Contents STGW25H120F2, STGWA25H120F2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package information 12 4.1 TO-247, package information 12 4.2 TO-247 long leads, package information . 14 5 Revision history . 16 2/17 DocID026003 Rev 4

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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