VS-ETH1506FP-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 15 A FRED Pt FEATURES Hyperfast soft recovery time Low forward voltage drop 175 C operating junction temperature 1 2 Low leakage current 1 Cathode Anode Fully isolated package (V = 2500 V ) INS RMS 2 True 2 pin package 2L TO-220 FullPAK Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance PRIMARY CHARACTERISTICS please see www.vishay.com/doc 99912 I 15 A F(AV) DESCRIPTION / APPLICATIONS V 600 V R V at I 1.25 V Hyperfast recovery rectifiers designed with optimized F F performance of forward voltage drop, hyperfast recovery t (typ.) 21 ns rr time, and soft recovery. T max. 175 C J The planar structure and the platinum doped life time control Package 2L TO-220 FullPAK guarantee the best overall performance, ruggedness and Circuit configuration Single reliability characteristics. These devices are intended for use in PFC boost stage in th e AC/DC section of SMPS, inverters or as freewheeling diodes. The extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Peak repetitive reverse voltage V 600 V RRM Average rectified forward current in DC I T = 94 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 160 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 1.8 2.45 F Forward voltage V F I = 15 A, T = 150 C - 1.25 1.6 F J V = V rated - 0.01 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 200 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8 - nH S Revision: 25-Jul-2019 Document Number: 93522 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-ETH1506FP-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 21 26 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 25 36 F F R Reverse recovery time t ns rr T = 25 C -29 - J T = 125 C - 65 - J I = 15 A, F T = 25 C - 3.9 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 7.0 - J V = 390 V R T = 25 C - 60 - J Reverse recovery charge Q nC rr T = 125 C - 240 - J Reverse recovery time t -42 - ns rr I = 15 A, F Peak recovery current I T = 125 C dI /dt = 800 A/s, -21 - A RRM J F V = 390 V R Reverse recovery charge Q -480 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -3.74.3 thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 C/W thJA junction-to-ambient Typical thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case-to-heatsink -2 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) Marking device Case style 2L TO-220 FullPAK ETH1506FP Revision: 25-Jul-2019 Document Number: 93522 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000