VS-ETU1506S-M3 Vishay

VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors Ultra Fast Rectifier, 15 A FRED Pt FEATURES Low forward voltage drop Ultrafast recovery time 175 C operating junction temperature 2 1 Low leakage current 1 Designed and qualified according to JEDEC -JESD 47 3 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak D PAK (TO-263AB) 3 TO-262AA of 245 C Base cathode Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 DESCRIPTION State of the art, ultralow V , soft-switching ultrafast rectifiers F optimized for discontinuous (critical) mode (DCM) power 3 1 3 1 factor correction (PFC). N/C Anode N/C Anode The minimized conduction loss, optimized stored charge VS-ETU1506S-M3 VS-ETU1506-1-M3 and low recovery current minimized the switching losses and reduce over dissipation in the switching element and PRIMARY CHARACTERISTICS snubbers. I 15 A The device is also intended for use as a freewheeling diode F(AV) in power supplies and other power switching applications. V 600 V R V at I 1.1 V F F APPLICATIONS t (typ.) 24 ns rr AC/DC SMPS 70 W to 400 W T max. 175 C J e.g. laptop and printer AC adaptors, desktop PC, TV and 2 Package D PAK (TO-263AB), TO-262AA monitor, games units, and DVD AC/DC power supplies. Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS Repetitive peak reverse voltage V 600 V RRM Average rectified forward current I T = 143 C 15 F(AV) C A Non-repetitive peak surge current I T = 25 C 160 FSM C Operating junction and storage temperatures T , T -65 to +175 C J Stg ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, V , BR I = 100 A 600 - - R blocking voltage V R V I = 15 A - 1.35 1.9 F Forward voltage V F I = 15 A, T = 150 C - 1.1 1.3 F J V = V rated - 0.01 15 R R Reverse leakage current I A R T = 150 C, V = V rated - 20 200 J R R Junction capacitance C V = 600 V - 12 - pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S Revision: 25-Oct-17 Document Number: 96334 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-ETU1506S-M3, VS-ETU1506-1-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1 A, dI /dt = 100 A/s, V = 30 V - 24 28 F F R I = 15 A, dI /dt = 100 A/s, V = 30 V - 36 47 F F R Reverse recovery time t ns rr T = 25 C -40- J T = 125 C - 87 - J I = 15 A F T = 25 C - 5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 9.0 - J V = 390 V R T = 25 C - 107 - J Reverse recovery charge Q C rr T = 125 C - 430 - J Reverse recovery time t -53- ns rr I = 15 A F Peak recovery current I T = 125 C dI /dt = 800 A/s -25- A RRM J F V = 390 V R Reverse recovery charge Q -730 - nC rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage T , T -65 - 175 C J Stg temperature range Thermal resistance, R -1.31.51C/W thJC junction-to-case Thermal resistance, R Typical socket mount - - 70 thJA junction-to-ambient Thermal resistance, Mounting surface, flat, smooth, and R -0.5 - thCS case-to-heat sink greased -2.0 - g Weight -0.07 - oz. 6 12 kgf cm Mounting torque - (5) (10) (lbf in) 2 Case style D PAK (TO-263AB) ETU1506S Marking device Case style TO-262 ETU1506-1 100 1000 175 C 100 T = 175 C J 150 C 10 125 C 1 100 C 10 75 C 0.1 T = 150 C J 50 C 0.01 25 C T = 25 C 0.001 J 1 0.0001 0.5 1.0 1.5 2.0 2.5 0 100 200 300 400 500 600 V - Forward Voltage Drop (V) V - Reverse Voltage (V) FM R Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 25-Oct-17 Document Number: 96334 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R