VS-HFA08PB120-N3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 8 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr 1 Designed and qualified according to JEDEC -JESD 47 33 Material categorization: TO-247AC 2L for definitions of compliance please see Base www.vishay.com/doc 99912 cathode BENEFITS 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 13 Reduced parts count Cathode Anode DESCRIPTION VS-HFA08PB120... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance PRIMARY CHARACTERISTICS which is unsurpassed by any rectifier previously available. I 8 A F(AV) With basic ratings of 1200 V and 8 A continuous current, the VS-HFA08PB120... is especially well suited for use as the V 1200 V R companion diode for IGBTs and MOSFETs. In addition to V at I 2.4 V F F ultrafast recovery time, the HEXFRED product line features t typ. 28 ns rr extremely low values of peak recovery current (I ) and RRM T max. 150 C J does not exhibit any tendency to snap-off during the t portion of recovery. The HEXFRED features combine to b Package TO-247AC 2L offer designers a rectifier with lower noise and significantly Circuit configuration Single lower switching losses in both the diode and the switchin g transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count an d heatsink sizes. The HEXFRED VS-HFA08PB120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 1200 V R Maximum continuous forward current I T = 100 C 8 F C Single pulse forward current I t = 10 ms 130 A FSM p Maximum repetitive forward current I 32 FRM T = 25 C 73.5 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 29-Nov-2019 Document Number: 94040 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-HFA08PB120-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage I = 8.0 A -2.6 3.3 F V Maximum forward voltage V I = 16 A See fig. 1 - 3.4 4.3 FM F I = 8.0 A, T = 125 C - 2.4 3.1 F J V = V rated -0.31 10 R R Maximum reverse I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 135 1000 J R R Junction capacitance C V = 200 V See fig. 3 - 11 20 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 28 - rr F F R Reverse recovery time t T = 25 C -63 95 ns rr1 J See fig. 5, 10 t T = 125 C - 106 160 rr2 J I T = 25 C - 4.5 8.0 RRM1 J Peak recovery current A See fig. 6 I T = 125 C - 6.2 11 I = 8.0 A RRM2 J F dI /dt = 200 A/s F Q T = 25 C - 140 380 Reverse recovery charge rr1 J V = 200 V R nC See fig. 7 Q T = 125 C - 335 880 rr2 J Peak rate of recovery dI /dt1 T = 25 C - 133 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 85 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction to case Thermal resistance, R Typical socket mount - - 40 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.25 - thCS case to heatsink -6.0 - g Weight -0.21 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style TO-247AC 2L HFA08PB120 Revision: 29-Nov-2019 Document Number: 94040 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000