VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors HEXFRED , Ultrafast Soft Recovery Diode, 15 A FEATURES Ultrafast and ultrasoft recovery Very low I and Q RRM rr Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Designed and qualified for industrial level 2 TO-263AB (D PAK) TO-262AA AEC-Q101 qualified Material categorization: Base for definitions of compliance please see cathode 2 www.vishay.com/doc 99912 2 BENEFITS Reduced RFI and EMI 1 Reduced power loss in diode and switching transistor 3 1 3 N/C Anode Higher frequency operation N/C Anode Reduced snubbing VS-HFA15 TB60SPbFVS-HFA15 TB60-1PbF Reduced parts count DESCRIPTION VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques PRODUCT SUMMARY it features a superb combination of characteristics which 2 result in performance which is unsurpassed by any rectifier Package TO-263AB (D PAK), TO-262AA previously available. With basic ratings of 600 V and I 15 A F(AV) 15 A continuous current, the VS-HFA15TB60SPbF, V 600 V VS-HFA15TB60-1PbF is especially well suited for use as the R companion diode for IGBTs and MOSFETs. In addition to V at I 1.2 V F F ultrafast recovery time, the HEXFRED product line features t (typ.) 23 ns rr extremely low values of peak recovery current (I ) and RRM does not exhibit any tendency to snap-off during the t b T max. 150 C J portion of recovery. The HEXFRED features combine to offer Diode variation Single die designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 15 F C Single pulse forward current I 150 A FSM Maximum repetitive forward current I 60 FRM T = 25 C 74 C Maximum power dissipation P W D T = 100 C 29 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 29-Feb-16 Document Number: 94054 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 15 A -1.3 1.7 F V Maximum forward voltage V I = 30 A See fig. 1 - 1.5 2.0 FM F I = 15 A, T = 125 C - 1.2 1.6 F J -1.0 10 V = V rated Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated J R R - 400 1000 Junction capacitance C V = 200 V See fig. 3 - 25 50 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 - rr F F R Reverse recovery time t T = 25 C -50 60 ns rr1 J See fig. 5 t T = 125 C - 105 120 rr2 J I T = 25 C - 4.5 6.0 RRM1 J Peak recovery current A See fig. 6 I T = 125 C I = 15 A - 6.5 10 RRM2 J F dI /dt = 200 A/s F Q T = 25 C - 84 180 Reverse recovery charge rr1 J nC = 200 V V R See fig. 7 Q T = 125 C - 241 600 rr2 J Peak rate of fall of recovery dI /dt1 T = 25 C - 188 - (rec)M J current during t A/s b dI /dt2 T = 125 C - 160 - See fig. 8 (rec)M J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.7 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 2 Case style D PAK HFA15TB60S Marking device Case style TO-262 HFA15TB60-1 Revision: 29-Feb-16 Document Number: 94054 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000