VS-HFA16TB120-M3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES 2 Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD 47 1 Material categorization: 3 for definitions of compliance please see 2L TO-220AC www.vishay.com/doc 99912 Base BENEFITS cathode 2 Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 1 3 Cathode Anode Reduced parts count DESCRIPTION VS-HFA16TB120... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance PRIMARY CHARACTERISTICS which is unsurpassed by any rectifier previously available. I 16 A F(AV) With basic ratings of 1200 V and 16 A continuous current, V 1200 V R the VS-HFA16TB120... is especially well suited for use as V at I 2.3 V F F the companion diode for IGBTs and MOSFETs. In addition t typ. 30 ns rr to ultrafast recovery time, the HEXFRED product line T max. 150 C J features extremely low values of peak recovery current Package 2L TO-220AC (I ) and does not exhibit any tendency to snap-off RRM during the t portion of recovery. The HEXFRED features b Circuit configuration Single combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 1200 V R Maximum continuous forward current I T = 100 C 16 F C Single pulse forward current I 190 A FSM Maximum repetitive forward current I 64 FRM T = 25 C 151 C Maximum power dissipation P W D T = 100 C 60 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 23-Nov-17 Document Number: 96192 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA16TB120-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 1200 - - BR R breakdown voltage I = 16 A -2.5 3.0 F V Maximum forward voltage V I = 32 A See fig. 1 - 3.2 3.93 FM F I = 16 A, T = 125 C - 2.3 2.7 F J V = V rated -0.75 20 Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 375 2000 J R R Junction capacitance C V = 200 V See fig. 3 - 27 40 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, di /dt = 200 A/s, V = 30 V - 30 - rr F F R Reverse recovery time t T = 25 C - 90 135 ns rr1 J See fig. 5 and 10 t T = 125 C - 164 245 rr2 J I T = 25 C - 5.8 10 RRM1 J Peak recovery current A See fig. 6 I T = 125 C I = 16 A - 8.3 15 RRM2 J F di /dt = 200 A/s F Q T = 25 C - 260 675 Reverse recovery charge rr1 J V = 200 V nC R See fig. 7 Q T = 125 C - 680 1838 rr2 J Peak rate of fall of di /dt1 T = 25 C - 120 - (rec)M J recovery current during t A/s b di /dt2 T = 125 C - 76 - (rec)M J See fig. 8 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --0.83 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.50 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC HFA16TB120 Revision: 23-Nov-17 Document Number: 96192 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000