VS-HFA25TB60-M3 www.vishay.com Vishay Semiconductors HEXFRED Ultrafast Soft Recovery Diode, 25 A FEATURES 2 Ultrafast and ultrasoft recovery Very low I and Q RRM rr Designed and qualified according to JEDEC -JESD 47 1 Material categorization: 3 for definitions of compliance please see 2L TO-220AC www.vishay.com/doc 99912 BENEFITS Base cathode Reduced RFI and EMI 2 Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing 1 3 Cathode Anode Reduced parts count DESCRIPTION VS-HFA25TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. PRIMARY CHARACTERISTICS With basic ratings of 600 V and 25 A continuous current, the I 25 A F(AV) VS-HFA25TB60... is especially well suited for use as the V 600 V R companion diode for IGBTs and MOSFETs. In addition to V at I 1.3 V F F ultrafast recovery time, the HEXFRED product line features t typ. 23 ns rr extremely low values of peak recovery current (I ) and RRM T max. 150 C J does not exhibit any tendency to snap-off during the Package 2L TO-220AC t portion of recovery. The HEXFRED features combine to b offer designers a rectifier with lower noise and significantly Circuit configuration Single lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA25TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Cathode to anode voltage V 600 V R Maximum continuous forward current I T = 100 C 25 F C Single pulse forward current I 225 A FSM Maximum repetitive forward current I 100 FRM T = 25 C 125 C Maximum power dissipation P W D T = 100 C 50 C Operating junction and storage temperature range T , T -55 to +150 C J Stg Revision: 23-Nov-17 Document Number: 96193 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-HFA25TB60-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode V I = 100 A 600 - - BR R breakdown voltage I = 25 A -1.3 1.7 F V Maximum forward voltage V I = 50 A See fig. 1 - 1.5 2.0 FM F I = 25 A, T = 125 C - 1.3 1.7 F J V = V rated -1.5 20 Maximum reverse R R I See fig. 2 A RM leakage current T = 125 C, V = 0.8 x V rated - 600 2000 J R R Junction capacitance C V = 200 V See fig. 3 - 55 100 pF T R Series inductance L Measured lead to lead 5 mm from package body - 8.0 - nH S DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS t I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 23 - rr F F R Reverse recovery time t T = 25 C -50 75 ns rr1 J See fig. 5, 6 and 16 t T = 125 C - 105 160 rr2 J I T = 25 C - 4.5 10 RRM1 J Peak recovery current A See fig. 7 and 8 I T = 125 C I = 25 A - 8.0 15 RRM2 J F di /dt = 200 A/s F Q T = 25 C - 112 375 rr1 J Reverse recovery charge V = 200 V nC R See fig. 9 and 10 Q T = 125 C - 420 1200 rr2 J Peak rate of fall of recovery di /dt1 T = 25 C - 250 - (rec)M J current during t A/s b di /dt2 T = 125 C - 160 - (rec)M J See fig. 11 and 12 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Lead temperature T 0.063 from case (1.6 mm) for 10 s - - 300 C lead Thermal resistance, R --1.0 thJC junction to case Thermal resistance, R Typical socket mount - - 80 K/W thJA junction to ambient Thermal resistance, R Mounting surface, flat, smooth, and greased - 0.5 - thCS case to heatsink -2.0 - g Weight -0.07 - oz. 6.0 12 kgf cm Mounting torque - (5.0) (10) (lbf in) Marking device Case style 2L TO-220AC HFA25TB60 Revision: 23-Nov-17 Document Number: 96193 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000