VS-MBRA140-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1 A FEATURES Low forward voltage drop Guard ring for enhanced ruggedness and long term reliability Cathode Anode Small foot print, surface mountable High frequency operation DO-214AC (SMA) Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Material categorization: for definitions of compliance PRODUCT SUMMARY please see www.vishay.com/doc 99912 Package DO-214AC (SMA) DESCRIPTION I 1 A F(AV) The VS-MBRA140-M3 surface mount Schottky rectifier has V 40 V R been designed for applications requiring low forward drop V at I 0.49 V F F and very small foot prints on PC boards. Typical I 26 mA at 125 C RM applications are in disk drives, switching power supplies, T max. 150 C converters, freewheeling diodes, battery charging, and J reverse battery protection. Diode variation Single die E 3.0 mJ AS MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 1 A F(AV) V 40 V RRM I t = 5 s sine 120 A FSM p V 1.5 A , T = 125 C 0.56 V F pk J T Range -55 to +150 C J VOLTAGE RATINGS PARAMETER SYMBOL VS-MBRA140-M3 UNITS Maximum DC reverse voltage V R 40 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 50 % duty cycle at T = 123 C, rectangular waveform L 2 On PC board 9 mm island 1.5 (0.013 mm thick copper pad area) Maximum average forward current I A F(AV) See fig. 4 50 % duty cycle at T = 132 C, rectangular waveform L 2 On PC board 9 mm island 1 (0.013 mm thick copper pad area) Maximum peak one cycle Following any rated 5 s sine or 3 s rect. pulse 120 non-repetitive surge current I load condition and with A FSM 10 ms sine or 6 ms rect. pulse 30 See fig. 6 rated V applied RRM Non-repetitive avalanche energy E T = 25 C, I = 1 A, L = 6 mH 3.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 1.0 A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 10-Jun-16 Document Number: 95883 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-MBRA140-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS 1 A 0.54 T = 25 C J 1.5 A 0.62 Maximum forward voltage drop (1) V V FM See fig. 1 1 A 0.49 T = 125 C J 1.5 A 0.56 T = 25 C 0.5 Maximum reverse leakage current J I V = Rated V mA RM R R See fig. 2 T = 125 C 26 J Threshold voltage V 0.36 V F(TO) T = T maximum J J Forward slope resistance r 104 m t Typical junction capacitance C V = 10 V , T = 25 C, test signal = 1 MHz 38 pF T R DC J Typical series inductance L Measured lead to lead 5 mm from package body 2.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width = 300 s, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction and (1) T , T -55 to +150 C J Stg storage temperature range Maximum thermal resistance, R DC operation 80 C/W thJA junction to ambient 0.07 g Approximate weight 0.002 oz. Marking device Case style SMA (similar D-64) 1F Note dP tot 1 (1) ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT R J thJA Revision: 10-Jun-16 Document Number: 95883 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000