VSMY98525DS
www.vishay.com
Vishay Semiconductors
High Power Infrared Emitting Diode, 850 nm,
Surface Emitter Technology
FEATURES
Package type: surface-mount
Double stack technology
Package form: power QFN
Dimensions (L x W x H in mm): 3.85 x 3.85 x 3.00
Peak wavelength: = 850 nm
p
Zener diode for ESD protection up to 2 kV
High radiant power
High radiant intensity
Angle of half intensity: = 25
Designed for high drive currents: up to 1 A (DC) and up
DESCRIPTION
to 5 A pulses
TM
As part of the SurfLight portfolio, the VSMY98525DS
Low thermal resistance: R = 9 K/W
thJP
is an infrared, 850 nm emitting diode based on surface
Floor life: 168 h, MSL 3, according to J-STD-020
emitter technology with high radiant power and high speed,
Lead (Pb)-free reflow soldering
molded in low thermal resistance SMD package with lens.
Material categorization: for definitions of compliance
A 42 mil chip provides outstanding radiant intensity and
please see www.vishay.com/doc?99912
allows DC operation of the device up to 1 A. Superior ESD
characteristics are ensured by an integrated Zener diode.
APPLICATIONS
Infrared illumination for CMOS cameras (CCTV)
Illumination for cameras (3D gaming)
Machine vision
PRODUCT SUMMARY
t (ns)
COMPONENT I (mW/sr) (deg) (nm)
e p r
VSMY98525DS 1000 25 850 14
Note
Test conditions see table Basic Characteristics
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMY98525DS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens
Note
MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage V 5V
R
Forward current I 1A
F
Peak forward current t /T = 0.5, t = 100 s I 2A
p p FM
Surge forward current t = 100 s I 5A
p FSM
Power dissipation P 3.5 W
V
Junction temperature T 115 C
j
Operating temperature range T -40 to +85 C
amb
Storage temperature range T -55 to +100 C
stg
Soldering temperature According to Fig. 7, J-STD-20 T 260 C
sd
Thermal resistance junction-to-pin JESD 51 R 9K/W
thJP
Rev. 1.0, 21-Mar-18 Document Number: 84908
1
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSMY98525DS
www.vishay.com
Vishay Semiconductors
4.0
1.0
3.5
3.0
0.8
2.5
0.6 R = 9 K/W
thJA
2.0
R = 9 K/W
thJA
0.4
1.5
1.0
0.2
0.5
0
0
0 20406080 100
0 20406080 100
T - Ambient Temperature (C)
T - Ambient Temperature (C) amb
amb
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I = 1 A, t = 20 ms V -3.1 3.5 V
F p F
Temperature coefficient of V I = 1 A - -3 - mV/K
F F
Reverse current V = 5 V I - - 10 A
R R
2
Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C -130 - pF
R J
Radiant intensity I = 1 A, t = 20 ms I 800 1000 1600 mW/sr
F p e
Radiant power I = 1 A, t = 20 ms -1300- mW
F p e
Temperature coefficient of I = 1 A, t = 20 ms TK - -0.3 - %/K
F p
Angle of half intensity - 25 - deg
Peak wavelength I = 1 A 830 850 870 nm
F p
Spectral bandwidth I = 1 A -35- nm
F
Temperature coefficient of I = 1 A, t = 20 ms TK -0.3 - nm/K
p F p p
Rise time I = 1 A t -14- ns
F r
Fall time I = 1 A t -17- ns
F f
BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified)
amb
10 000 1000
t = 100 s
p
t = 100 s
p
1000 100
100 10
10 1
2.0 3.0 4.0 5.0 10 100 1000
V - Forward Voltage (V) I - Forward Current (mA)
F F
Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Radiant Intensity vs. Forward Current
Rev. 1.0, 21-Mar-18 Document Number: 84908
2
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
P - Power Dissipation (W)
I - Forward Current (mA)
V
F
I - Relative Radiant Intensity (%)
I - Forward Current (A)
e,rel
F