VSMY98575ADS www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology FEATURES Package type: surface-mount Double stack technology Package form: power QFN Dimensions (L x W x H in mm): 3.85 x 3.85 x 1.51 Peak wavelength: = 850 nm p Zener diode for ESD protection up to 2 kV High radiant power High radiant intensity Angle of half intensity: = 75 Designed for high drive currents: up to 1 A (DC) and up DESCRIPTION to 5 A pulses TM As part of the SurfLight portfolio, the VSMY98575ADS is Low thermal resistance: R = 9 K/W an infrared, 850 nm emitting diode based on surface emitter thJP technology with high radiant power and high speed, molded Floor life: 168 h, MSL 3, according to J-STD-020 in low thermal resistance SMD package with lens. A 42 mil Lead (Pb)-free reflow soldering chip provides outstanding radiant intensity and allows Material categorization: for definitions of compliance DC operation of the device up to 1 A. Superior ESD please see www.vishay.com/doc 99912 characteristics are ensured by an integrated Zener diode. APPLICATIONS Infrared illumination for CMOS cameras (CCTV, 3D gaming) Machine vision PRODUCT SUMMARY COMPONENT I (mW/sr) (deg) (nm) t (ns) r e p VSMY98575ADS 320 75 850 14 Note Test conditions see table Basic Characteristics ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VSMY98575ADS Tape and reel MOQ: 600 pcs, 600 pcs/reel High power with lens Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V 5V R Forward current I 1A F Peak forward current t /T = 0.5, t = 100 s I 2A p p FM Surge forward current t = 100 s I 5A p FSM Power dissipation P 3.5 W V Junction temperature T 115 C j Operating temperature range T -40 to +85 C amb Storage temperature range T -55 to +100 C stg Soldering temperature According to Fig. 7, J-STD-20 T 260 C sd Thermal resistance junction / pin JESD 51 R 9K/W thJP Rev. 1.0, 18-Apr-18 Document Number: 84391 1 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSMY98575ADS www.vishay.com Vishay Semiconductors 4.0 1.0 3.5 3.0 0.8 2.5 0.6 R = 9 K/W thJA 2.0 R = 9 K/W thJA 0.4 1.5 1.0 0.2 0.5 0 0 0 20406080 100 0 20406080 100 T - Ambient Temperature (C) T - Ambient Temperature (C) amb amb Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I = 1 A, t = 20 ms V -3.1 3.5 V F p F Temperature coefficient of V I = 1 A TK --3- mV/K F F VF Reverse current V = 5 V I - - 10 A R R 2 Junction capacitance V = 0 V, f = 1 MHz, E = 0 mW/cm C - 130 - pF R J Radiant intensity I = 1 A, t = 20 ms I 160 320 - mW/sr F p e Radiant power I = 1 A, t = 20 ms - 1270 - mW F p e Temperature coefficient of I = 1 A, t = 20 ms TH - -0.3 - %/K e F p e Angle of half intensity - 75 - deg Peak wavelength I = 1 A 830 850 870 nm F p Spectral bandwidth I = 1 A -35- nm F Rise time I = 1 A t -14- ns F r Fall time I = 1 A t -17- ns F f BASIC CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 10 000 1000 t = 100 s p t = 100 s p 1000 100 100 10 10 1 2.0 3.0 4.0 5.0 10 100 1000 V - Forward Voltage (V) I - Forward Current (mA) F F Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Relative Radiant Intensity vs. Forward Current Rev. 1.0, 18-Apr-18 Document Number: 84391 2 For technical questions, contact: emittertechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 P - Power Dissipation (W) I - Forward Current (mA) V F I - Relative Radiant Intensity (%) I - Forward Current (A) e,rel F