VSSAF3N50 www.vishay.com Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES TMBS eSMP Series Very low profile - typical height of 0.95 mm Ideal for automated placement Trench MOS Schottky technology Low power losses, high efficiency Low forward voltage drop Bottom View Top View Meets MSL level 1, per J-STD-020, LF maximum peak SlimSMA (DO-221AC) of 260 C Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 TYPICAL APPLICATIONS click logo to get started DESIGN SUPPORT TOOLS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. Models Available MECHANICAL DATA Case: SlimSMA (DO-221AC) PRIMARY CHARACTERISTICS Molding compound meets UL 94 V-0 flammability rating I 3.0 A Base P/N-M3 - halogen-free, RoHS-compliant, and F(AV) commercial grade V 50 V RRM I 80 A Terminals: matte tin plated leads, solderable per FSM J-STD-002 and JESD22-B102 V at I = 3.0 A 0.40 V F F M3 suffix meets JESD 201 class 2 whisker test T max. 150 C J Polarity: color band denotes cathode end Package SlimSMA (DO-221AC) Circuit configuration Single MAXIMUM RATINGS (T = 25 C unless otherwise noted) A PARAMETER SYMBOL VSSAF3N50 UNIT Device marking code 3N5 50 V Maximum repetitive peak reverse voltage V RRM (1) I 3.0 F Maximum DC forward current (fig. 1) A (2) I 2.7 F Peak forward surge current 10 ms single half sine-wave I 80 A FSM superimposed on rated load Maximum DC reserve voltage V 35 V DC Operating junction and storage temperature range T , T -40 to +150 C J STG Note (1) Mounted on 5 mm x 5 mm copper pad areas, 2 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 04-May-2018 Document Number: 87720 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VSSAF3N50 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) A PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT I = 1.5 A 0.40 - F T = 25 C A I = 3.0 A 0.47 0.54 F (1) Instantaneous forward voltage V V F I = 1.5 A 0.30 - F T = 125 C A I = 3.0 A 0.40 0.48 F T = 25 C 0.01 - A V = 35 V R T = 125 C 8 - A (2) Reverse current I mA R T = 25 C - 1 A V = 50 V R T = 125 C 12.5 35 A Typical junction capacitance 4.0 V, 1 MHz C 570 - pF J Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 5 ms THERMAL CHARACTERISTICS (T = 25 C unless otherwise specified) A PARAMETER SYMBOL VSSAF3N50 UNIT (1) R 115 JA Typical thermal resistance C/W (1) R 12 JM Note (1) Free air, mounted on recommended PCB, 2 oz. pad area thermal resistance R - junction to ambient, R - junction to mount JA JM ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSAF3N50-M3/6A 0.032 6A 3500 7 diameter plastic tape and reel VSSAF3N50-M3/6B 0.032 6B 14 000 13 diameter plastic tape and reel Revision: 04-May-2018 Document Number: 87720 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000