Product Information

VS-STPS20L15DPBF

VS-STPS20L15DPBF electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers RECOMMENDED ALT 78-VS-STPS20L15D-M3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 1.386
10 : USD 1.1435
100 : USD 0.8732
500 : USD 0.8284
1000 : USD 0.8243
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 20 A FEATURES Base 125 C T operation (V < 5 V) J R cathode Optimized for OR-ing applications Ultra low forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability 1 3 High purity, high temperature epoxy Cathode Anode TO-220AC encapsulation for enhanced mechanical strength and moisture resistance Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Designed and qualified according to JEDEC-JESD47 Package TO-220AC Halogen-free according to IEC 61249-2-21 definition (-N3 only) I 20 A F(AV) V 15 V R DESCRIPTION V at I See Electrical table F F The Schottky rectifier module has been optimized for ultra low forward voltage drop specifically for the OR-ing of I max. 600 mA at 100 C RM parallel power supplies. The proprietary barrier technology T max. 125 C J allows for reliable operation up to 125 C junction Diode variation Single die temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and E 10 mJ AS redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 20 A F(AV) V 15 V RRM I t = 5 s sine 700 A FSM p V 19 A , T = 125 C (typical) 0.25 V F pk J T Range - 55 to 125 C J VOLTAGE RATINGS PARAMETER SYMBOLVS-STPS20L15DPbFVS-STPS20L15D-N3UNITS Maximum DC reverse voltage V R 15 15 V Maximum working peak reverse voltage V RWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUESUNITS Maximum average forward current I 50 % duty cycle, T = 85 C, rectangular waveform 20 A F(AV) C See fig. 5 Maximum peak one cycle 5 s sine or 3 s rect. pulse Following any rated load 700 non-repetitive surge current I condition and with rated A FSM 10 ms sine or 6 ms rect. pulse V applied 330 RRM See fig. 7 Non-repetitive avalanche energy E T = 25 C, I = 2 A, L = 6 mH 10 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current I 2A AR Frequency limited by T maximum V = 1.5 x V typical J A R Revision: 30-Aug-11 Document Number: 94325 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-STPS20L15DPbF, VS-STPS20L15D-N3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS 19 A -0.41 T = 25 C J 40 A - 0.52 Forward voltage drop (1) V V FM See fig. 1 19 A 0.25 0.33 T = 125 C J 40 A 0.37 0.50 T = 25 C -10 Reverse leakage current J (1) I V = Rated V mA RM R R See fig. 2 T = 100 C - 600 J Threshold voltage V 0.182 V F(TO) T = T maximum J J Forward slope resistance r 7.6 m t Maximum junction capacitance C V = 5 V (test signal range 100 kHz to 1 MHz) 25 C - 2000 pF T R DC Typical series inductance L Measured lead to lead 5 mm from package body 8 - nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction temperature range T - 55 to 125 J C Maximum storage temperature range T - 55 to 150 Stg Maximum thermal resistance, DC operation R 1.5 thJC junction to case See fig. 4 Typical thermal resistance, Mounting surface, smooth and greased R 0.50 C/W thCS case to heatsink (for TO-220) Maximum thermal resistance, DC operation R 40 thJA 2 (for D PAK) junction to ambient 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) Marking device Case style TO-220AC STPS20L15D Revision: 30-Aug-11 Document Number: 94325 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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