Product Information

VS-UFL230FA60

VS-UFL230FA60 electronic component of Vishay

Datasheet
Vishay Semiconductors Rectifiers 230 Amp 600 Volt

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 25.1896 ea
Line Total: USD 25.19

531 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
503 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 25.1896
10 : USD 22.7691
25 : USD 22.6267
50 : USD 22.5436
100 : USD 20.4554
250 : USD 20.1113
480 : USD 18.7706

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
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Length
Product
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Cnhts
Hts Code
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VS-UFL230FA60 www.vishay.com Vishay Semiconductors Insulated Ultrafast Rectifier Module, 230 A FEATURES Two fully independent diodes Fully insulated package Ultrafast, soft reverse recovery, with high operation junction temperature (T max. = 175 C) J Low forward voltage drop Optimized for power conversion: welding and industrial SMPS applications Easy to use and parallel Industry standard outline SOT-227 UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRIMARY CHARACTERISTICS V 600 V R DESCRIPTION / APPLICATIONS I per module at T = 102 C 230 A F(AV) C The VS-UFL230FA60 insulated modules integrate two state t 44 ns rr of the art ultrafast recovery rectifiers in the compact, Type Modules - diode FRED Pt industry standard SOT-227 package. The diodes structure, Package SOT-227 and its life time control, provide an ultrasoft recovery current shape, together with the best overall performance, ruggedness and reliability characteristics. These devices are thus intended for high frequency applications in which the switching energy is designed not to be predominant portion of the total energy, such as in the output rectification stage of welding machines, SMPS, DC/DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the switching elements (and snubbers) an d EMI/RFI. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Cathode to anode voltage V 600 V R Continuous forward current per diode I T = 85 C 160 F C A Single pulse forward current per diode I T = 25 C 1500 FSM C Maximum power dissipation per module P T = 85 C 416 W D C RMS isolation voltage V Any terminal to case, t = 1 min 2500 V ISOL Operating junction and storage temperatures T , T -55 to +175 C J Stg Revision: 10-Sep-2019 Document Number: 93635 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-UFL230FA60 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PER DIODE (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Cathode to anode breakdown voltage V I = 100 A 600 - - BR R I = 100 A - 1.28 1.44 F I = 100 A, T = 125 C - 1.13 1.24 V F J Forward voltage V FM = 200 A - 1.48 1.66 I F I = 200 A, T = 125 C - 1.37 1.55 F J V = V rated - 0.1 50 A R R Reverse leakage current I RM T = 175 C, V = V rated - 0.25 2 mA J R R Junction capacitance C V = 600 V - 72 - pF T R DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 200 A/s, V = 30 V - 44 - F F R Reverse recovery time t T = 25 C - 104 - ns rr J T = 125 C - 210 - J I = 50 A F T = 25 C - 10 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 22 - J V = 200 V R T = 25 C - 520 - J Reverse recovery charge Q nC rr T = 125 C - 2200 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSMIN. TYP. MAX. UNITS Junction to case, single leg conducting - - 0.43 R thJC Junction to case, both leg conducting - - 0.215 C/W Case to heatsink R Flat, greased surface - 0.05 - thCS Weight -30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Mounting torque Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Case style SOT-227 Revision: 10-Sep-2019 Document Number: 93635 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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BEYSCHLAG
DALE
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