Product Information

VS-VSKH56/14

VS-VSKH56/14 electronic component of Vishay

Datasheet
SCR Modules 1400 Volt 60 Amp 890 Amp IFSM

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 47.7236 ea
Line Total: USD 47.72

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1
1 : USD 43.5092
10 : USD 37.6954
20 : USD 36.9479
50 : USD 35.9868
100 : USD 35.4884
200 : USD 35.1681

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Minimum Operating Temperature
Packaging
Mounting Style
Breakover Current Ibo Max
Current Rating
Brand
Circuit Type
Product Type
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VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors AAP Gen 7 (TO-240AA) Power Modules Thyristor/Diode and Thyristor/Thyristor, 45 A, 60 A FEATURES High voltage Industrial standard package Low thermal resistance UL approved file E78996 Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 BENEFITS ADD-A-PAK Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate PRIMARY CHARACTERISTICS Up to 1600 V I or I 45 A, 60 A T(AV) F(AV) High surge capability Type Modules - thyristor, standard Easy mounting on heatsink Package AAP Gen 7 (TO-240AA) ELECTRICAL DESCRIPTION MECHANICAL DESCRIPTION These modules are intended for general purpose high The AAP Gen 7 (TO-240AA), new generation of AAP module, voltage applications such as high voltage regulated power combines the excellent thermal performances obtained by supplies, lighting circuits, temperature and motor speed the usage of exposed direct bonded copper substrate, with control circuits, UPS, and battery charger. advanced compact simple package solution and simplified internal structure with minimized number of interfaces. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VS-VSK.41 VS-VSK.56 UNITS I or I 85 C 45 60 T(AV) F(AV) I As AC switch 100 135 O(RMS) A 50 Hz 850 1200 I TSM, I FSM 60 Hz 890 1256 50 Hz 3.61 7.20 2 2 I t kA s 60 Hz 3.30 6.57 2 2 I t 36.1 72 kA s V /V Range 400 to 1600 400 to 1600 V DRM RRM T -40 to +125 C Stg T -40 to +125 C J Revision: 26-Jul-2018 Document Number: 94630 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000VS-VSK.41.., VS-VSK.56.. Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS V , MAXIMUM V , MAXIMUM V , MAXIMUM REPETITIVE RRM RSM DRM I I RRM, DRM VOLTAGE REPETITIVE PEAK NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, TYPE NUMBER AT 125 C REVERSE VOLTAGE REVERSE VOLTAGE GATE OPEN CIRCUIT CODE mA V V V 04 400 500 400 06 600 700 600 08 800 900 800 VS-VSK.41 10 1000 1100 1000 15 VS-VSK.56 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS Maximum average on-state current (thyristors) I T(AV) 180 conduction, half sine wave, 45 60 T = 85 C Maximum average forward current (diodes) I C F(AV) Maximum continuous RMS on-state current, or I I I 100 135 O(RMS) (RMS) (RMS) as AC switch A t = 10 ms 850 1200 No voltage Sinusoidal I TSM reapplied t = 8.3 ms 890 1256 Maximum peak, one-cycle non-repetitive half wave, or on-state or forward current initial T = t = 10 ms J 715 1000 100 % V RRM I FSM T maximum J reapplied t = 8.3 ms 750 1056 t = 10 ms 3.61 7.20 No voltage reapplied t = 8.3 ms 3.30 6.57 Initial T = J 2 2 2 Maximum I t for fusing I t kA s T maximum t = 10 ms J 2.56 5.10 100 % V RRM reapplied t = 8.3 ms 2.33 4.56 t = 0.1 ms to 10 ms, no voltage reapplied 2 2 (1) 2 Maximum I t for fusing I t 36.1 72 kA s T = T maximum J J (3) Low level 1.08 0.91 (2) Maximum value or threshold voltage V T = T maximum V T(TO) J J (4) High level 1.12 1.02 (3) Low level 4.7 4.27 Maximum value of on-state (2) r T = T maximum m t J J (4) slope resistance High level 4.5 3.77 V I = x I TM TM T(AV) Maximum peak on-state or forward voltage T = 25 C 1.81 1.7 V J V I = x I FM FM F(AV) Maximum non-repetitive rate of rise of T = 25 C, from 0.67 V , J DRM dI/dt 150 A/s turned on current I = x I , I = 500 mA, t < 0.5 s, t > 6 s TM T(AV) g r p T = 25 C, anode supply = 6 V, J Maximum holding current I 200 H resistive load, gate open circuit mA Maximum latching current I T = 25 C, anode supply = 6 V, resistive load 400 400 L J Notes (1) 2 2 I t for time t = I t x t x x (2) 2 Average power = V x I + r x (I ) T(TO) T(AV) t T(RMS) (3) 16.7 % x x I < I < x I AV AV (4) I > x I AV Revision: 26-Jul-2018 Document Number: 94630 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
BC
BC COMPONENTS
BC COMPONENTS (VISHAY)
BCC
BEYSCHLAG
DALE
DALE (VISHAY)
DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
ROEDERSTEIN / VISHAY
SFERNICE (VISHAY)
SFR
SILICONIX
SILICONIX (VISHAY)
SIX
SPD
SPECTROL
SPECTROL ELECTRONICS
SPP
SPRAGUE (VISHAY)
TECHNO
VIR
Vishay BC Components
Vishay Beyschlag
Vishay Cera-Mite
Vishay Dale
Vishay Draloric
Vishay Electro-Films
Vishay Huntington
Vishay Mills
Vishay Milwaukee
Vishay Polytech
Vishay Roederstein
Vishay Sfernice
Vishay Siliconix
Vishay Spectrol
Vishay Sprague
Vishay Tansitor
Vishay Techno
Vishay Thin Film
Vishay Vitramon
Vishay / BC Components
Vishay / Beyschlag
Vishay / Cera-Mite
Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
Vishay / Mills
Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
Vishay / Thin Film
Vishay / Vitramon
Vishay BC Components
Vishay Beyschlag
Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
VISHAY DRALORIC
VISHAY ELECTRO-FILMS
VISHAY FOIL RESISTORS
Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
VISHAY SMALL SIGNAL
VISHAY SPECIALTY CAPACITORS
Vishay Spectrol
Vishay Sprague
VISHAY TANSITOR
VISHAY TECHNO
Vishay Thin Film
Vishay Vitramon
VISHAY/BC COMPONENTS
Vishay/Beyschlag
Vishay/Dale
Vishay/General Semic
VISHAY/SILICONIX
VishayBC Components
VishayBeyschlag
VishayElectro-Films
VishayGeneral Semiconductor
VishaySemiconductors
VishaySprague
VishayVitramon
VIT
VITRAMON (VISHAY)
VITRAMON/VISHAY
VITROMON
VSC
VSO
VSS

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