VA10820 VA10800 6.5 DC Current Consumption .................. 26 6.6 DC Standby Current Consumption .... 26 Table of Contents 6.7 Internal Weak Pull-up/Pull-down ..... 26 6.8 Post Total Ionizing Dose (TID) Current 1 Functional Description ....................... 4 Consumption ................................................ 27 1.1 Related Documentation ...................... 4 6.8.1 Post-TID Leakage Current non-I2C Pads 1.2 Feature Summary ............................... 4 ................................................................. 27 1.3 Power-Up Sequence ........................... 8 6.8.2 Post-TID Leakage Current I2C Pads ... 27 1.4 Power-Up and Reset Behavior of pins 8 6.8.3 Post-TID Standby Current Consumption 1.5 Other Resets ....................................... 9 ................................................................. 27 1.6 Support for in system programming of 6.9 128 pin QFP Pin Capacitance............. 28 the SPI ROM ................................................... 9 1.7 I2C pins ............................................. 10 7 AC Electrical Characteristics ........... 29 1.8 eFuse Writing.................................... 10 7.1 AC Timing Conditions ........................ 29 7.1.1 Output delay derating for loads ........ 29 2 Block Diagram .................................. 11 7.2 Internal Nominal 1 MHz Oscillator .... 30 7.3 Clock Signal ....................................... 30 3 Pin Descriptions ................................ 12 7.4 GPIO PORTA/PORTB ......................... 31 4 Package Options ............................. 14 7.5 I2C pins ............................................. 32 4.1 128 Pin Ceramic LQFP ....................... 14 7.6 I2C Pin Timing ................................... 34 4.2 128 Pin Plastic LQFP .......................... 15 7.7 SPI ROM ............................................ 34 7.8 JTAG.................................................. 36 5 Die Options ...................................... 16 5.1 Table of Die Pad Coordinates from 8 Radiation Hardened Performance . 37 Center of Die in Microns .............................. 16 9 Thermal Characteristics ................... 38 5.2 Pad Layout with Marking in Upper Left Corner of Die ................................................ 20 10 Electrostatic Discharge (ESD) 6 Ratings Tables .................................. 21 Protection Charcteristics ......................... 39 6.1 Absolute Maximum Ratings .............. 21 11 Package Mechanical Information 6.2 Recommended Supply Operating 40 Condition ..................................................... 21 11.1 128 Pin Plastic LQFP Nominal Package 6.3 Recommended Supply Conditions .... 21 Dimensions (mm) ......................................... 40 6.4 Signal Pads Operating Conditions ..... 23 11.2 128 Pin Ceramic LQFP Nominal 6.4.1 Non- I2C Pads ................................... 23 Package Dimensions (mm) ........................... 41 6.4.2 Leakage Current non-I2C pads .......... 24 6.4.3 VOL, VOH non-I2C pads .................... 24 12 Ordering Information ................... 42 6.4.4 I2C pads ........................................... 25 12.1 Part Marking ..................................... 42 6.4.5 Input Leakage Current and Output Voltage I2C Pads ....................................... 25 www.voragotech.com Rev2.6 page 1 VA10820 VA10800 13 Development kit Ordering Information .............................................. 42 14 Errata ............................................. 43 15 Revision History ............................ 44 www.voragotech.com Rev2.6 page 2