BT131-600/DG,412 WeEn Semiconductor

BT131-600/DG,412 electronic component of WeEn Semiconductor
BT131-600/DG,412 WeEn Semiconductor
BT131-600/DG,412 Triacs
BT131-600/DG,412  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BT131-600/DG,412 Triacs across the USA, India, Europe, Australia, and various other global locations. BT131-600/DG,412 Triacs are a product manufactured by WeEn Semiconductor. We provide cost-effective solutions for Triacs, ensuring timely deliveries around the world.

Part No. BT131-600/DG,412
Manufacturer: WeEn Semiconductor
Category: Triacs
Description: TO-92-3 TRIACs ROHS
Datasheet: BT131-600/DG,412 Datasheet (PDF)
Price (USD)
1: USD 0.5288 ea
Line Total: USD 0.53 
Availability : 9730
  
Ship by Thu. 13 Nov to Mon. 17 Nov
QtyUnit Price
1$ 0.5288
10$ 0.3612
100$ 0.2232
500$ 0.1683
1000$ 0.143
2500$ 0.1419
5000$ 0.1287
10000$ 0.1199
25000$ 0.1089

Availability 9730
Ship by Thu. 13 Nov to Mon. 17 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5288
10$ 0.3612
100$ 0.2232
500$ 0.1683
1000$ 0.143
2500$ 0.1419
5000$ 0.1287
10000$ 0.1199
25000$ 0.1089

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Off-State Leakage Current Vdrm Idrm
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the BT131-600/DG,412 from our Triacs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BT131-600/DG,412 and other electronic components in the Triacs category and beyond.

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BT131-600 4Q Triac 4 October 2016 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits Direct interfacing to logic level ICs Direct interfacing to low power gate drive circuits and microcontrollers High blocking voltage capability Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate 3. Applications Air conditioner indoor fan control General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 51 C Fig. 1 - - 1 A T(RMS) lead Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 12.5 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 13.7 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 0.4 3 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 1.3 3 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 1.4 3 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BT131-600 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G+ - 3.8 7 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 1.3 5 mA H D j V on-state voltage I = 1.4 A T = 25 C Fig. 10 - 1.2 1 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 10 20 - V/s D DM j DM voltage 67% of V ) exponential waveform DRM R = 1 k Fig. 12 GT1(ext) dV /dt rate of change of V = 400 V T = 125 C dI / 2 - - V/s com D j com commutating voltage dt = 0.5 A/ms I = 1 A gate open T circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 T2 T1 G 2 G gate sym051 3 T1 main terminal 1 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT131-600 TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT131-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 4 October 2016 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors
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