NXPSC10650X6Q WeEn Semiconductor

NXPSC10650X Silicon Carbide Diode 6 January 2017 Product data sheet 1. General description Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies. 2. Features and benefits Highly stable switching performance High forward surge capability I FSM Extremely fast reverse recovery time Superior in efficiency to Silicon Diode alternatives Reduced losses in associated MOSFET Reduced EMI Reduced cooling requirements RoHS compliant Insulated package rated at 2500V RMS 3. Applications Power factor correction Telecom / Server SMPS UPS PV inverter PC Silverbox LED / OLED TV Motor Drives 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 650 V RRM voltage I average forward = 0.5 T 25 C square-wave - - 10 A F(AV) h current pulse Fig. 1 Fig. 2 Fig. 3 Fig. 4 T junction temperature - - 175 C j Static characteristics V forward voltage I = 10 A T = 25 C Fig. 6 - 1.5 1.7 V F F j I = 10 A T = 150 C Fig. 6 - 1.8 2.1 V F j Dynamic characteristicsWeEn Semiconductors NXPSC10650X Silicon Carbide Diode Symbol Parameter Conditions Min Typ Max Unit Q recovered charge I = 10 A dI /dt = 500 A/s - 15 - nC r F F V = 400 V T = 25 C Fig. 7 R j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A 001aaa020 2 A anode mb n.c. mounting base isolated 2 1 TO220F-2L 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NXPSC10650X - Plastic single-ended through-hole package isolated heatsink TO220F-2L mounted 1 mounting hole 2-lead TO-220F NXPSC10650X All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2017. All rights reserved Product data sheet 6 January 2017 2 / 10