Product Information

BT136S-600F,118

BT136S-600F,118 electronic component of WeEn Semiconductor

Datasheet
Triacs TAPE13 TRIAC
A low voltage, 600V, high-gain fast switching triac transistor module with a sensative gate.

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.2281 ea
Line Total: USD 570.25

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 7500
Multiples : 2500

Stock Image

BT136S-600F,118
WeEn Semiconductor

7500 : USD 0.7488
10000 : USD 0.7426
15000 : USD 0.7365
20000 : USD 0.7303
25000 : USD 0.724
30000 : USD 0.7178
40000 : USD 0.7115
50000 : USD 0.7052
100000 : USD 0.6989
125000 : USD 0.6925

0 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

BT136S-600F,118
WeEn Semiconductor

1 : USD 0.6122
10 : USD 0.5422
100 : USD 0.3779
500 : USD 0.3248
1000 : USD 0.2838
2500 : USD 0.262
5000 : USD 0.2512
10000 : USD 0.2512
25000 : USD 0.2427

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

BT136S-600F,118
WeEn Semiconductor

1 : USD 1.0728
3 : USD 0.8862
10 : USD 0.6169
30 : USD 0.5072
45 : USD 0.369

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 2500
Multiples : 2500

Stock Image

BT136S-600F,118
WeEn Semiconductor

2500 : USD 0.2281

     
Manufacturer
Product Category
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Package / Case
Mounting Style
Packaging
Hts Code
LoadingGif

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BT136S-600F,118 is a thyristor manufactured by WeEn Semiconductor. It is a single gate-controlled four-layer silicon controlled rectifier (SCR) with a low on-state voltage drop and low gate trigger current. The device has a commutation power of 600V/18A and a maximum junction temperature of 150°C. It features fast and soft switching to minimize EMI, superior thermal stability, and minimal gate current requirements. The device is optimized for snubberless operation to reduce the system cost, and is RoHS compliant.

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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