Product Information

BT136X-600E,127

BT136X-600E,127 electronic component of WeEn Semiconductor

Datasheet
Thyristors - TRIACs Two-way thyristor 600V TO-220F (TO-220IS) RoHS

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5809 ea
Line Total: USD 0.58

65 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
65 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

BT136X-600E,127
WeEn Semiconductor

1 : USD 0.5809
10 : USD 0.4935
50 : USD 0.4458
100 : USD 0.3916
500 : USD 0.3674
1000 : USD 0.3568

     
Manufacturer
Product Category
Rohs
Package
Type
Voltage - Off State Max
Current - On State It Rms Max
Voltage - Gate Trigger Vgt Max
Current - Gate Trigger Igt Max
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BT136X-600E 4Q Triac 30 April 2015 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT186Afull pac plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gateseries triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Direct triggering from low power drivers and logic ICs High blocking voltage capability Isolated package Low holding current for small load currents and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I non-repetitive peak on- full sine wave T = 25 C - - 25 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p I RMS on-state current full sine wave T 92 C Fig. 1 Fig. 2 - - 4 A T(RMS) h Fig. 3 Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 2.5 10 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 4 10 mA D T T = 25 C Fig. 7 j Scan or click this QR code to view the latest information for this product TO-220FNXP Semiconductors BT136X-600E 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G- - 5 10 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G+ - 11 25 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 2.2 15 mA H D j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T1 main terminal 1 mb T2 T1 G 2 T2 main terminal 2 sym051 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT136X-600E TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT136X-600E/DG TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT136X-600E All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 30 April 2015 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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